Neidio i'r cynnwys
VuFind
English
Deutsch
Español
Français
Italiano
日本語
Nederlands
Português
Português (Brasil)
中文(简体)
中文（繁體）
Türkçe
עברית
Gaeilge
Cymraeg
Ελληνικά
Català
Euskara
Русский
Čeština
Suomi
Svenska
polski
Dansk
slovenščina
اللغة العربية
বাংলা
Galego
Tiếng Việt
Hrvatski
हिंदी
Հայերէն
Українська
Sámegiella
Монгол
Iaith
Pob Maes
Teitl
Awdur
Pwnc
Rhif Galw
ISBN/ISSN
Tag
Canfod
Uwch
TWO-DIMENSIONAL CONDUCTIVITY I...
Dyfynnu hwn
Anfonwch hwn fel neges destun
E-bostio hwn
Argraffu
Allforio Cofnod
Allforio i RefWorks
Allforio i EndNoteWeb
Allforio i EndNote
Permanent link
TWO-DIMENSIONAL CONDUCTIVITY IN THE CONTACT REGIONS OF SILICON MOSFETS
Manylion Llyfryddiaeth
Prif Awduron:
Kressrogers, E
,
Nicholas, R
,
Englert, T
,
Pepper, M
Fformat:
Journal article
Cyhoeddwyd:
1980
Daliadau
Disgrifiad
Eitemau Tebyg
Dangos Staff
Eitemau Tebyg
CYCLOTRON-RESONANCE STUDIES ON BULK AND TWO-DIMENSIONAL CONDUCTION ELECTRONS IN INSE
gan: Kressrogers, E, et al.
Cyhoeddwyd: (1982)
THE CYCLOTRON-RESONANCE LINEWIDTH IN TWO-DIMENSIONAL ELECTRON ACCUMULATION LAYERS IN INSE
gan: Kressrogers, E, et al.
Cyhoeddwyd: (1983)
ELECTRON-TRANSPORT IN SILICON INVERSION-LAYERS AT HIGH MAGNETIC-FIELDS AND THE INFLUENCE OF SUBSTRATE BIAS
gan: Nicholas, R, et al.
Cyhoeddwyd: (1980)
TWO-DIMENSIONAL BEHAVIOR DUE TO ELECTRONS BOUND AT DEFECTS IN INSE
gan: Nicholas, R, et al.
Cyhoeddwyd: (1982)
Two-dimensional analytical threshold voltage model of nanoscale strained silicon MOSFET with tri-material gate /
gan: Muhamad Syahir Tumaran, 1987-, et al.
Cyhoeddwyd: (2010)