TWO-DIMENSIONAL CONDUCTIVITY IN THE CONTACT REGIONS OF SILICON MOSFETS

समान संसाधन

• CYCLOTRON-RESONANCE STUDIES ON BULK AND TWO-DIMENSIONAL CONDUCTION ELECTRONS IN INSE
  द्वारा: Kressrogers, E, और अन्य
  प्रकाशित: (1982)
• THE CYCLOTRON-RESONANCE LINEWIDTH IN TWO-DIMENSIONAL ELECTRON ACCUMULATION LAYERS IN INSE
  द्वारा: Kressrogers, E, और अन्य
  प्रकाशित: (1983)
• ELECTRON-TRANSPORT IN SILICON INVERSION-LAYERS AT HIGH MAGNETIC-FIELDS AND THE INFLUENCE OF SUBSTRATE BIAS
  द्वारा: Nicholas, R, और अन्य
  प्रकाशित: (1980)
• TWO-DIMENSIONAL BEHAVIOR DUE TO ELECTRONS BOUND AT DEFECTS IN INSE
  द्वारा: Nicholas, R, और अन्य
  प्रकाशित: (1982)
• Two-dimensional analytical threshold voltage model of nanoscale strained silicon MOSFET with tri-material gate /
  द्वारा: Muhamad Syahir Tumaran, 1987-, और अन्य
  प्रकाशित: (2010)