TWO-DIMENSIONAL CONDUCTIVITY IN THE CONTACT REGIONS OF SILICON MOSFETS

Схожие документы

• CYCLOTRON-RESONANCE STUDIES ON BULK AND TWO-DIMENSIONAL CONDUCTION ELECTRONS IN INSE
  по: Kressrogers, E, и др.
  Опубликовано: (1982)
• THE CYCLOTRON-RESONANCE LINEWIDTH IN TWO-DIMENSIONAL ELECTRON ACCUMULATION LAYERS IN INSE
  по: Kressrogers, E, и др.
  Опубликовано: (1983)
• ELECTRON-TRANSPORT IN SILICON INVERSION-LAYERS AT HIGH MAGNETIC-FIELDS AND THE INFLUENCE OF SUBSTRATE BIAS
  по: Nicholas, R, и др.
  Опубликовано: (1980)
• TWO-DIMENSIONAL BEHAVIOR DUE TO ELECTRONS BOUND AT DEFECTS IN INSE
  по: Nicholas, R, и др.
  Опубликовано: (1982)
• Two-dimensional analytical threshold voltage model of nanoscale strained silicon MOSFET with tri-material gate /
  по: Muhamad Syahir Tumaran, 1987-, и др.
  Опубликовано: (2010)