Characterisation of epitaxial lateral overgrown GaN by electron backscatter diffraction correlated with cross-sectional cathodoluminescence spectroscopy

समान संसाधन

• Determination of the structural and luminescence properties of nitrides using electron backscattered diffraction and photo- and cathodoluminescence
  द्वारा: Trager-Cowan, C, और अन्य
  प्रकाशित: (2002)
• Characterisation of nitride thin films by electron backscatter diffraction and electron channelling contrast imaging
  द्वारा: Trager-Cowan, C, और अन्य
  प्रकाशित: (2006)
• Characterization of nitride thin films by electron backscatter diffraction and electron channeling contrast imaging
  द्वारा: Trager-Cowan, C, और अन्य
  प्रकाशित: (2006)
• Electron backscatter diffraction and electron channeling contrast imaging of tilt and dislocations in nitride thin films
  द्वारा: Trager-Cowan, C, और अन्य
  प्रकाशित: (2007)
• High-resolution electron backscatter diffraction in III-nitride semiconductors
  द्वारा: Vilalta-Clemente, A, और अन्य
  प्रकाशित: (2015)