Characterisation of epitaxial lateral overgrown GaN by electron backscatter diffraction correlated with cross-sectional cathodoluminescence spectroscopy

Documenti analoghi

• Determination of the structural and luminescence properties of nitrides using electron backscattered diffraction and photo- and cathodoluminescence
  di: Trager-Cowan, C, et al.
  Pubblicazione: (2002)
• Characterisation of nitride thin films by electron backscatter diffraction and electron channelling contrast imaging
  di: Trager-Cowan, C, et al.
  Pubblicazione: (2006)
• Characterization of nitride thin films by electron backscatter diffraction and electron channeling contrast imaging
  di: Trager-Cowan, C, et al.
  Pubblicazione: (2006)
• Electron backscatter diffraction and electron channeling contrast imaging of tilt and dislocations in nitride thin films
  di: Trager-Cowan, C, et al.
  Pubblicazione: (2007)
• High-resolution electron backscatter diffraction in III-nitride semiconductors
  di: Vilalta-Clemente, A, et al.
  Pubblicazione: (2015)