A simple and robust quantum memristor
Memristive systems are generalisations of memristors, which are resistors with memory. In this paper, we present a quantum description of memristive systems. Using this model we propose and experimentally demonstrate a simple and practical scheme for realising memristive systems with quantum dots. T...
| Asıl Yazarlar: | , , , , , |
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| Materyal Türü: | Journal article |
| Baskı/Yayın Bilgisi: |
2016
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| _version_ | 1826305083701198848 |
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| author | Li, Y Holloway, G Benjamin, S Briggs, G Baugh, J Mol, J |
| author_facet | Li, Y Holloway, G Benjamin, S Briggs, G Baugh, J Mol, J |
| author_sort | Li, Y |
| collection | OXFORD |
| description | Memristive systems are generalisations of memristors, which are resistors with memory. In this paper, we present a quantum description of memristive systems. Using this model we propose and experimentally demonstrate a simple and practical scheme for realising memristive systems with quantum dots. The approach harnesses a phenomenon that is commonly seen as a bane of nanoelectronics, i.e. switching of a trapped charge in the vicinity of the device. We show that quantum-dot memristive systems have hysteresis current-voltage characteristics and quantum jump induced stochastic behaviour. Realising such a quantum memristor completes the menu of components for quantum circuit design. |
| first_indexed | 2024-03-07T06:27:29Z |
| format | Journal article |
| id | oxford-uuid:f4cee723-a3e2-4c35-a192-01817dcedebf |
| institution | University of Oxford |
| last_indexed | 2024-03-07T06:27:29Z |
| publishDate | 2016 |
| record_format | dspace |
| spelling | oxford-uuid:f4cee723-a3e2-4c35-a192-01817dcedebf2022-03-27T12:22:36ZA simple and robust quantum memristorJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:f4cee723-a3e2-4c35-a192-01817dcedebfSymplectic Elements at Oxford2016Li, YHolloway, GBenjamin, SBriggs, GBaugh, JMol, JMemristive systems are generalisations of memristors, which are resistors with memory. In this paper, we present a quantum description of memristive systems. Using this model we propose and experimentally demonstrate a simple and practical scheme for realising memristive systems with quantum dots. The approach harnesses a phenomenon that is commonly seen as a bane of nanoelectronics, i.e. switching of a trapped charge in the vicinity of the device. We show that quantum-dot memristive systems have hysteresis current-voltage characteristics and quantum jump induced stochastic behaviour. Realising such a quantum memristor completes the menu of components for quantum circuit design. |
| spellingShingle | Li, Y Holloway, G Benjamin, S Briggs, G Baugh, J Mol, J A simple and robust quantum memristor |
| title | A simple and robust quantum memristor |
| title_full | A simple and robust quantum memristor |
| title_fullStr | A simple and robust quantum memristor |
| title_full_unstemmed | A simple and robust quantum memristor |
| title_short | A simple and robust quantum memristor |
| title_sort | simple and robust quantum memristor |
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