MOVPE grown self-assembled and self-ordered InSb quantum dots in a GaSb matrix assessed by AFM, CTEM, HRTEM and PL
Self-assembled InSb quantum dots (QDs) were grown by metal-organic vapour phase epitaxy (MOVPE) in a GaSb matrix. Atomic force microscopy (AFM), conventional diffraction contrast transmission electron microscopy (CTEM), high resolution transmission electron microscopy (HRTEM), and photoluminescence...
Hlavní autoři: | , , , , , , |
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Médium: | Conference item |
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2001
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author | Mock, P Booker, G Mason, N Nicholas, R Aphandery, E Topuria, T Browning, N |
author_facet | Mock, P Booker, G Mason, N Nicholas, R Aphandery, E Topuria, T Browning, N |
author_sort | Mock, P |
collection | OXFORD |
description | Self-assembled InSb quantum dots (QDs) were grown by metal-organic vapour phase epitaxy (MOVPE) in a GaSb matrix. Atomic force microscopy (AFM), conventional diffraction contrast transmission electron microscopy (CTEM), high resolution transmission electron microscopy (HRTEM), and photoluminescence (PL) were used for the assessment of the QDs. Reductions in the (III)/v, ratios and growth rates resulted in a change of the morphology of the InSb islands from hillocks without facets, and a low level of order to dumbbell shaped islands with distinct facets and a higher level of order. (C) 2001 Published by Elsevier Science B.V. |
first_indexed | 2024-03-07T06:27:58Z |
format | Conference item |
id | oxford-uuid:f4f94e91-e4dd-4d24-b37c-3b86a969fb43 |
institution | University of Oxford |
last_indexed | 2024-03-07T06:27:58Z |
publishDate | 2001 |
record_format | dspace |
spelling | oxford-uuid:f4f94e91-e4dd-4d24-b37c-3b86a969fb432022-03-27T12:23:49ZMOVPE grown self-assembled and self-ordered InSb quantum dots in a GaSb matrix assessed by AFM, CTEM, HRTEM and PLConference itemhttp://purl.org/coar/resource_type/c_5794uuid:f4f94e91-e4dd-4d24-b37c-3b86a969fb43Symplectic Elements at Oxford2001Mock, PBooker, GMason, NNicholas, RAphandery, ETopuria, TBrowning, NSelf-assembled InSb quantum dots (QDs) were grown by metal-organic vapour phase epitaxy (MOVPE) in a GaSb matrix. Atomic force microscopy (AFM), conventional diffraction contrast transmission electron microscopy (CTEM), high resolution transmission electron microscopy (HRTEM), and photoluminescence (PL) were used for the assessment of the QDs. Reductions in the (III)/v, ratios and growth rates resulted in a change of the morphology of the InSb islands from hillocks without facets, and a low level of order to dumbbell shaped islands with distinct facets and a higher level of order. (C) 2001 Published by Elsevier Science B.V. |
spellingShingle | Mock, P Booker, G Mason, N Nicholas, R Aphandery, E Topuria, T Browning, N MOVPE grown self-assembled and self-ordered InSb quantum dots in a GaSb matrix assessed by AFM, CTEM, HRTEM and PL |
title | MOVPE grown self-assembled and self-ordered InSb quantum dots in a GaSb matrix assessed by AFM, CTEM, HRTEM and PL |
title_full | MOVPE grown self-assembled and self-ordered InSb quantum dots in a GaSb matrix assessed by AFM, CTEM, HRTEM and PL |
title_fullStr | MOVPE grown self-assembled and self-ordered InSb quantum dots in a GaSb matrix assessed by AFM, CTEM, HRTEM and PL |
title_full_unstemmed | MOVPE grown self-assembled and self-ordered InSb quantum dots in a GaSb matrix assessed by AFM, CTEM, HRTEM and PL |
title_short | MOVPE grown self-assembled and self-ordered InSb quantum dots in a GaSb matrix assessed by AFM, CTEM, HRTEM and PL |
title_sort | movpe grown self assembled and self ordered insb quantum dots in a gasb matrix assessed by afm ctem hrtem and pl |
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