MOVPE grown self-assembled and self-ordered InSb quantum dots in a GaSb matrix assessed by AFM, CTEM, HRTEM and PL

MOVPE grown self-assembled and self-ordered InSb quantum dots in a GaSb matrix assessed by AFM, CTEM, HRTEM and PL

Self-assembled InSb quantum dots (QDs) were grown by metal-organic vapour phase epitaxy (MOVPE) in a GaSb matrix. Atomic force microscopy (AFM), conventional diffraction contrast transmission electron microscopy (CTEM), high resolution transmission electron microscopy (HRTEM), and photoluminescence...

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Manylion Llyfryddiaeth
Prif Awduron:	Mock, P, Booker, G, Mason, N, Nicholas, R, Aphandery, E, Topuria, T, Browning, N
Fformat:	Conference item
Cyhoeddwyd:	2001

Eitemau Tebyg

Self-assembled InSb quantum dots in InAs and GaSb matrices assessed by means of TEM, AFM and PL
gan: Mock, P, et al.
Cyhoeddwyd: (1999)

Structural and optical characterisation of MOVPE self-assembled InSb quantum dots in InAs and GaSb matrices
gan: Norman, A, et al.
Cyhoeddwyd: (1997)

MOVPE grown self-assembled Sb-based quantum dots assessed by means of AFM and TEM
gan: Mock, P, et al.
Cyhoeddwyd: (2000)

Self-assembled InSb quantum dots grown on GaSb: A photoluminescence, magnetoluminescence, and atomic force microscopy study
gan: Alphandery, E, et al.
Cyhoeddwyd: (1999)

Properties of narrow gap quantum dots and wells in the InAs/InSb/GaSb systems
gan: Nicholas, R, et al.
Cyhoeddwyd: (2004)

Far-infrared modulated photoluminescence spectroscopy of InSb/GaSb quantum dot structures
gan: Child, R, et al.
Cyhoeddwyd: (2003)

Photoluminescence of self-assembled InSb quantum dots grown on GaSb as a function of excitation power, temperature, and magnetic field
gan: Alphandery, E, et al.
Cyhoeddwyd: (2002)

Internal self-ordering in In(Sb,As), (In,Ga)Sb, and (Cd,Zn,Mn)Se nano-agglomerates/quantum dots
gan: Mock, P, et al.
Cyhoeddwyd: (2001)

Growth and characterization of an InSb infrared photoconductor on Si via an AlSb/GaSb buffer
gan: Jia, Bo Wen, et al.
Cyhoeddwyd: (2019)

ABSORPTION CHARACTERISTICS OF GASB/INAS AND INSB/INAS SLSS GROWN ON (111) GAAS BY MOVPE
gan: Lakrimi, M, et al.
Cyhoeddwyd: (1991)

Investigation of photoluminescence spectrums of InSb low-dimensional structures formed in GaSb matrix
gan: Andronova E. V., et al.
Cyhoeddwyd: (2011-11-01)

GROWTH OF GASB BY MOVPE
gan: Haywood, S, et al.
Cyhoeddwyd: (1988)

Growth of InAs/GaSb strained layer superlattices by MOVPE .3. Use of UV absorption to monitor alkyl stability in the reactor
gan: Booker, G, et al.
Cyhoeddwyd: (1997)

GASB HETEROSTRUCTURES GROWN BY MOVPE
gan: Chidley, E, et al.
Cyhoeddwyd: (1988)

MOCVD Growth of GaSb and Al GaSb
gan: E. Sustini, et al.
Cyhoeddwyd: (2019-01-01)

Effect of chemical bond polarity on wafer and cleavage surface oxidation for GaAs, GaSb, InAs and InSb single crystals
gan: Ulyana M. Matveyenka, et al.
Cyhoeddwyd: (2024-10-01)

GASB/INAS HETEROJUNCTIONS GROWN BY MOVPE
gan: Haywood, S, et al.
Cyhoeddwyd: (1991)

TED, TEM and AFM studies comparing atomic ordering in InAsySb1-y layers grown by MOVPE and MBE
gan: Seong, T, et al.
Cyhoeddwyd: (1997)

ELECTROLUMINESCENCE OUT TO 2.1 MU-M OBSERVED IN GASB/IN(X)GA(1-X)SB QUANTUM-WELLS GROWN BY MOVPE
gan: Krier, A, et al.
Cyhoeddwyd: (1994)

EFFECT OF MORPHOLOGY ON ELECTRONIC PROPERTIES OF THE <111> -ORIENTED GaAs, GaP, GaSb, InAs, InP AND InSb NANOWIRES
gan: D. A. Yatsyna, et al.
Cyhoeddwyd: (2019-06-01)

Non-Debye heat capacity formula refined and applied to GaP, GaAs, GaSb, InP, InAs, and InSb
gan: R. Pässler
Cyhoeddwyd: (2013-08-01)

Vertical transport and electroluminescence in InAs/GaSb/InAs structures: GaSb thickness and hydrostatic pressure studies
gan: Roberts, M, et al.
Cyhoeddwyd: (2002)

Self-Catalyzed InSb/InAs Quantum Dot Nanowires
gan: Omer Arif, et al.
Cyhoeddwyd: (2021-01-01)

Magnetotransport properties of InSb-MnSb nanostructured films
gan: Kochura Aleksey, et al.
Cyhoeddwyd: (2018-01-01)

Magnetoresistance of vertical transport in InAs/GaSb superlattices
gan: Broadley, V, et al.
Cyhoeddwyd: (2002)

The Effect of GaSb Substrate Oxidation Layer on InAs/GaSb Type II Superlattice
gan: Jiabo Liu, et al.
Cyhoeddwyd: (2023-03-01)

Optical probing of the minigap in InAs/GaSb superlattices
gan: Poulter, A, et al.
Cyhoeddwyd: (1998)

Intersubband transitions in InAs GaSb semimetallic superlattices
gan: Poulter, A, et al.
Cyhoeddwyd: (1999)

Optical probing of the minigap in InAs/GaSb superlattices
gan: Poulter, A, et al.
Cyhoeddwyd: (1999)

Magnetic breakdown in the semimetallic InAs/GaSb system
gan: Symons, D, et al.
Cyhoeddwyd: (1998)

Improved photoluminescence from electrochemically passivated GaSb
gan: Salesse, A, et al.
Cyhoeddwyd: (1997)

Magnetic breakdown in the semimetallic InAs/GaSb system
gan: Symons, D, et al.
Cyhoeddwyd: (1998)

Far infrared modulated photoluminescence in InSb quantum dots
gan: Child, R, et al.
Cyhoeddwyd: (2004)

CHEMICAL DISSOLUTION InAs, InSb, GaAs AND GaSb IN THE (NH4)2Cr2O7−HBr−H2O ETCHING COMPOSITIONS
gan: I. V. Levchenko, et al.
Cyhoeddwyd: (2017-09-01)

Optical Properties of GaSb Nanofibers
gan: Perez-Bergquist Alejandro, et al.
Cyhoeddwyd: (2011-01-01)

Study of the vibrational modes of GaSb/AlSb (001) superlattices
gan: D. Berdekas
Cyhoeddwyd: (2009-01-01)

Magnetoabsorption in InSb quantum-well heterostructures
gan: Orr, J, et al.
Cyhoeddwyd: (2009)

Nano-Ridge Engineering of GaSb for the Integration of InAs/GaSb Heterostructures on 300 mm (001) Si
gan: Marina Baryshnikova, et al.
Cyhoeddwyd: (2020-04-01)

Intersubband transitions in InAs/GaSb semi-metallic superlattices
gan: Poulter, A, et al.
Cyhoeddwyd: (1998)

Interface composition dependence of the band offset in InAs/GaSb
gan: Daly, MS, et al.
Cyhoeddwyd: (1996)