MOVPE grown self-assembled and self-ordered InSb quantum dots in a GaSb matrix assessed by AFM, CTEM, HRTEM and PL
Self-assembled InSb quantum dots (QDs) were grown by metal-organic vapour phase epitaxy (MOVPE) in a GaSb matrix. Atomic force microscopy (AFM), conventional diffraction contrast transmission electron microscopy (CTEM), high resolution transmission electron microscopy (HRTEM), and photoluminescence...
Հիմնական հեղինակներ: | Mock, P, Booker, G, Mason, N, Nicholas, R, Aphandery, E, Topuria, T, Browning, N |
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Ձևաչափ: | Conference item |
Հրապարակվել է: |
2001
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Նմանատիպ նյութեր
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Self-assembled InSb quantum dots in InAs and GaSb matrices assessed by means of TEM, AFM and PL
: Mock, P, և այլն
Հրապարակվել է: (1999) -
Structural and optical characterisation of MOVPE self-assembled InSb quantum dots in InAs and GaSb matrices
: Norman, A, և այլն
Հրապարակվել է: (1997) -
MOVPE grown self-assembled Sb-based quantum dots assessed by means of AFM and TEM
: Mock, P, և այլն
Հրապարակվել է: (2000) -
Self-assembled InSb quantum dots grown on GaSb: A photoluminescence, magnetoluminescence, and atomic force microscopy study
: Alphandery, E, և այլն
Հրապարակվել է: (1999) -
Properties of narrow gap quantum dots and wells in the InAs/InSb/GaSb systems
: Nicholas, R, և այլն
Հրապարակվել է: (2004)