Experimental and density functional study of Mn doped Bi₂Te₃ topological insulator

Experimental and density functional study of Mn doped Bi₂Te₃ topological insulator

We present a nanoscale structural and density functional study of the Mn doped 3D topological insulator Bi2Te3. X-ray absorption near edge structure show that Mn has valency of nominally 2+. Extended x-ray absorption fine structure spectroscopy in combination with electron energy loss spectroscopy (...

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Bibliographic Details
Main Authors: Ghasemi, A, Kepaptsoglou, D, Figueroa, A, Naydenov, G, Hasnip, P, Probert, M, Ramasse, Q, van der Laan, G, Hesjedal, T, Lazarov, V
Format: Journal article
Published: American Institute of Physics 2016
Description
Summary:We present a nanoscale structural and density functional study of the Mn doped 3D topological insulator Bi2Te3. X-ray absorption near edge structure show that Mn has valency of nominally 2+. Extended x-ray absorption fine structure spectroscopy in combination with electron energy loss spectroscopy (EELS) shows that Mn is a substitutional dopant of Bi and Te and also resides in the van der Waals gap between the quintuple layers of Bi2Te3. Combination of aberration-corrected scanningtransmission electron microscopy and EELS show that Mn substitution of Te occurs in film regions with increased Mn concentration. First-principles calculations show that the Mn dopants favor octahedral sites and are ferromagnetically coupled.

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