Charge-insensitive single-atom spin-orbit qubit in silicon

High fidelity entanglement of an on-chip array of spin qubits poses many challenges. Spin-orbit coupling (SOC) can ease some of these challenges by enabling long-ranged entanglement via electric dipole-dipole interactions, microwave photons, or phonons. However, SOC exposes conventional spin qubits...

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Main Authors: Salfi, J, Mol, J, Culcer, D, Rogge, S
Format: Journal article
Language:English
Published: American Physical Society 2016
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author Salfi, J
Mol, J
Culcer, D
Rogge, S
author_facet Salfi, J
Mol, J
Culcer, D
Rogge, S
author_sort Salfi, J
collection OXFORD
description High fidelity entanglement of an on-chip array of spin qubits poses many challenges. Spin-orbit coupling (SOC) can ease some of these challenges by enabling long-ranged entanglement via electric dipole-dipole interactions, microwave photons, or phonons. However, SOC exposes conventional spin qubits to decoherence from electrical noise. Here, we propose an acceptor-based spin-orbit qubit in silicon offering long-range entanglement at a sweet spot where the qubit is protected from electrical noise. The qubit relies on quadrupolar SOC with the interface and gate potentials. As required for surface codes, 10^{5} electrically mediated single-qubit and 10^{4} dipole-dipole mediated two-qubit gates are possible in the predicted spin lifetime. Moreover, circuit quantum electrodynamics with single spins is feasible, including dispersive readout, cavity-mediated entanglement, and spin-photon entanglement. An industrially relevant silicon-based platform is employed.
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spelling oxford-uuid:f7f7500d-4ab0-46e5-bf44-81e85fd5dc122022-03-27T12:46:45ZCharge-insensitive single-atom spin-orbit qubit in siliconJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:f7f7500d-4ab0-46e5-bf44-81e85fd5dc12EnglishSymplectic Elements at OxfordAmerican Physical Society2016Salfi, JMol, JCulcer, DRogge, SHigh fidelity entanglement of an on-chip array of spin qubits poses many challenges. Spin-orbit coupling (SOC) can ease some of these challenges by enabling long-ranged entanglement via electric dipole-dipole interactions, microwave photons, or phonons. However, SOC exposes conventional spin qubits to decoherence from electrical noise. Here, we propose an acceptor-based spin-orbit qubit in silicon offering long-range entanglement at a sweet spot where the qubit is protected from electrical noise. The qubit relies on quadrupolar SOC with the interface and gate potentials. As required for surface codes, 10^{5} electrically mediated single-qubit and 10^{4} dipole-dipole mediated two-qubit gates are possible in the predicted spin lifetime. Moreover, circuit quantum electrodynamics with single spins is feasible, including dispersive readout, cavity-mediated entanglement, and spin-photon entanglement. An industrially relevant silicon-based platform is employed.
spellingShingle Salfi, J
Mol, J
Culcer, D
Rogge, S
Charge-insensitive single-atom spin-orbit qubit in silicon
title Charge-insensitive single-atom spin-orbit qubit in silicon
title_full Charge-insensitive single-atom spin-orbit qubit in silicon
title_fullStr Charge-insensitive single-atom spin-orbit qubit in silicon
title_full_unstemmed Charge-insensitive single-atom spin-orbit qubit in silicon
title_short Charge-insensitive single-atom spin-orbit qubit in silicon
title_sort charge insensitive single atom spin orbit qubit in silicon
work_keys_str_mv AT salfij chargeinsensitivesingleatomspinorbitqubitinsilicon
AT molj chargeinsensitivesingleatomspinorbitqubitinsilicon
AT culcerd chargeinsensitivesingleatomspinorbitqubitinsilicon
AT rogges chargeinsensitivesingleatomspinorbitqubitinsilicon