Charge-insensitive single-atom spin-orbit qubit in silicon
High fidelity entanglement of an on-chip array of spin qubits poses many challenges. Spin-orbit coupling (SOC) can ease some of these challenges by enabling long-ranged entanglement via electric dipole-dipole interactions, microwave photons, or phonons. However, SOC exposes conventional spin qubits...
Main Authors: | , , , |
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Format: | Journal article |
Language: | English |
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American Physical Society
2016
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_version_ | 1826305706451533824 |
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author | Salfi, J Mol, J Culcer, D Rogge, S |
author_facet | Salfi, J Mol, J Culcer, D Rogge, S |
author_sort | Salfi, J |
collection | OXFORD |
description | High fidelity entanglement of an on-chip array of spin qubits poses many challenges. Spin-orbit coupling (SOC) can ease some of these challenges by enabling long-ranged entanglement via electric dipole-dipole interactions, microwave photons, or phonons. However, SOC exposes conventional spin qubits to decoherence from electrical noise. Here, we propose an acceptor-based spin-orbit qubit in silicon offering long-range entanglement at a sweet spot where the qubit is protected from electrical noise. The qubit relies on quadrupolar SOC with the interface and gate potentials. As required for surface codes, 10^{5} electrically mediated single-qubit and 10^{4} dipole-dipole mediated two-qubit gates are possible in the predicted spin lifetime. Moreover, circuit quantum electrodynamics with single spins is feasible, including dispersive readout, cavity-mediated entanglement, and spin-photon entanglement. An industrially relevant silicon-based platform is employed. |
first_indexed | 2024-03-07T06:36:54Z |
format | Journal article |
id | oxford-uuid:f7f7500d-4ab0-46e5-bf44-81e85fd5dc12 |
institution | University of Oxford |
language | English |
last_indexed | 2024-03-07T06:36:54Z |
publishDate | 2016 |
publisher | American Physical Society |
record_format | dspace |
spelling | oxford-uuid:f7f7500d-4ab0-46e5-bf44-81e85fd5dc122022-03-27T12:46:45ZCharge-insensitive single-atom spin-orbit qubit in siliconJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:f7f7500d-4ab0-46e5-bf44-81e85fd5dc12EnglishSymplectic Elements at OxfordAmerican Physical Society2016Salfi, JMol, JCulcer, DRogge, SHigh fidelity entanglement of an on-chip array of spin qubits poses many challenges. Spin-orbit coupling (SOC) can ease some of these challenges by enabling long-ranged entanglement via electric dipole-dipole interactions, microwave photons, or phonons. However, SOC exposes conventional spin qubits to decoherence from electrical noise. Here, we propose an acceptor-based spin-orbit qubit in silicon offering long-range entanglement at a sweet spot where the qubit is protected from electrical noise. The qubit relies on quadrupolar SOC with the interface and gate potentials. As required for surface codes, 10^{5} electrically mediated single-qubit and 10^{4} dipole-dipole mediated two-qubit gates are possible in the predicted spin lifetime. Moreover, circuit quantum electrodynamics with single spins is feasible, including dispersive readout, cavity-mediated entanglement, and spin-photon entanglement. An industrially relevant silicon-based platform is employed. |
spellingShingle | Salfi, J Mol, J Culcer, D Rogge, S Charge-insensitive single-atom spin-orbit qubit in silicon |
title | Charge-insensitive single-atom spin-orbit qubit in silicon |
title_full | Charge-insensitive single-atom spin-orbit qubit in silicon |
title_fullStr | Charge-insensitive single-atom spin-orbit qubit in silicon |
title_full_unstemmed | Charge-insensitive single-atom spin-orbit qubit in silicon |
title_short | Charge-insensitive single-atom spin-orbit qubit in silicon |
title_sort | charge insensitive single atom spin orbit qubit in silicon |
work_keys_str_mv | AT salfij chargeinsensitivesingleatomspinorbitqubitinsilicon AT molj chargeinsensitivesingleatomspinorbitqubitinsilicon AT culcerd chargeinsensitivesingleatomspinorbitqubitinsilicon AT rogges chargeinsensitivesingleatomspinorbitqubitinsilicon |