| Summary: | Electron microscopy studies are carried out to determine the structure of GaMnN films grown on 6H-SiC (0001) and MgO(111) substrates by plasma-assisted molecular beam epitaxy. For the MnGaN multilayer growth, cubic zinc blende GaMnN is observed in the nominal MnGaN multilayer region and surface microprotrusions, indicative of high Mn mobility. In contrast, for the H-assisted growth of Mn-doped GaN, single phase hexagonal wurtzite GaMnN is obtained, but with columnar structure, indicative of reduced Mn mobility during growth. © 2008 American Institute of Physics.
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