Electronic and Structural Properties of SnxTi1-xO2 (0.0 <= x <= 0.1) Solid Solutions
The electronic and structural properties of dilute solid solutions of SnO2 in TiO2 have been investigated. Samples of Sn xTi1-xO2 with 0.0 e x e 0.1 (i.e., 0-10% Sn doping) were prepared by solid state reaction of SnO2 and TiO 2 powders at 1200 C°followed by rapid quenching. Narrowing of the bandgap...
| Hlavní autoři: | , , , |
|---|---|
| Médium: | Journal article |
| Jazyk: | English |
| Vydáno: |
2010
|
| Shrnutí: | The electronic and structural properties of dilute solid solutions of SnO2 in TiO2 have been investigated. Samples of Sn xTi1-xO2 with 0.0 e x e 0.1 (i.e., 0-10% Sn doping) were prepared by solid state reaction of SnO2 and TiO 2 powders at 1200 C°followed by rapid quenching. Narrowing of the bandgap at low Sn doping level was observed through both diffuse reflectance spectroscopy and valence band photoemission spectroscopy. This provides an explanation of the visible light photocatalytic activity previously reported for this system. X-ray diffraction showed a positive deviation of the lattice parameters from Vegard's Law, whereas Raman spectra revealed a red-shift in the Eg and B1g peaks and a blue-shift in the A1g peak with increasing Sn content. © 2010 American Chemical Society. |
|---|