Electronic and Structural Properties of SnxTi1-xO2 (0.0 <= x <= 0.1) Solid Solutions

The electronic and structural properties of dilute solid solutions of SnO2 in TiO2 have been investigated. Samples of Sn xTi1-xO2 with 0.0 e x e 0.1 (i.e., 0-10% Sn doping) were prepared by solid state reaction of SnO2 and TiO 2 powders at 1200 C°followed by rapid quenching. Narrowing of the bandgap...

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Κύριοι συγγραφείς: Harunsani, M, Oropeza, F, Palgrave, R, Egdell, R
Μορφή: Journal article
Γλώσσα:English
Έκδοση: 2010
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author Harunsani, M
Oropeza, F
Palgrave, R
Egdell, R
author_facet Harunsani, M
Oropeza, F
Palgrave, R
Egdell, R
author_sort Harunsani, M
collection OXFORD
description The electronic and structural properties of dilute solid solutions of SnO2 in TiO2 have been investigated. Samples of Sn xTi1-xO2 with 0.0 e x e 0.1 (i.e., 0-10% Sn doping) were prepared by solid state reaction of SnO2 and TiO 2 powders at 1200 C°followed by rapid quenching. Narrowing of the bandgap at low Sn doping level was observed through both diffuse reflectance spectroscopy and valence band photoemission spectroscopy. This provides an explanation of the visible light photocatalytic activity previously reported for this system. X-ray diffraction showed a positive deviation of the lattice parameters from Vegard's Law, whereas Raman spectra revealed a red-shift in the Eg and B1g peaks and a blue-shift in the A1g peak with increasing Sn content. © 2010 American Chemical Society.
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spelling oxford-uuid:f8d0b9f2-de6c-4b2f-94e7-664da709649c2022-03-27T12:53:25ZElectronic and Structural Properties of SnxTi1-xO2 (0.0 <= x <= 0.1) Solid SolutionsJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:f8d0b9f2-de6c-4b2f-94e7-664da709649cEnglishSymplectic Elements at Oxford2010Harunsani, MOropeza, FPalgrave, REgdell, RThe electronic and structural properties of dilute solid solutions of SnO2 in TiO2 have been investigated. Samples of Sn xTi1-xO2 with 0.0 e x e 0.1 (i.e., 0-10% Sn doping) were prepared by solid state reaction of SnO2 and TiO 2 powders at 1200 C°followed by rapid quenching. Narrowing of the bandgap at low Sn doping level was observed through both diffuse reflectance spectroscopy and valence band photoemission spectroscopy. This provides an explanation of the visible light photocatalytic activity previously reported for this system. X-ray diffraction showed a positive deviation of the lattice parameters from Vegard's Law, whereas Raman spectra revealed a red-shift in the Eg and B1g peaks and a blue-shift in the A1g peak with increasing Sn content. © 2010 American Chemical Society.
spellingShingle Harunsani, M
Oropeza, F
Palgrave, R
Egdell, R
Electronic and Structural Properties of SnxTi1-xO2 (0.0 <= x <= 0.1) Solid Solutions
title Electronic and Structural Properties of SnxTi1-xO2 (0.0 <= x <= 0.1) Solid Solutions
title_full Electronic and Structural Properties of SnxTi1-xO2 (0.0 <= x <= 0.1) Solid Solutions
title_fullStr Electronic and Structural Properties of SnxTi1-xO2 (0.0 <= x <= 0.1) Solid Solutions
title_full_unstemmed Electronic and Structural Properties of SnxTi1-xO2 (0.0 <= x <= 0.1) Solid Solutions
title_short Electronic and Structural Properties of SnxTi1-xO2 (0.0 <= x <= 0.1) Solid Solutions
title_sort electronic and structural properties of snxti1 xo2 0 0 lt x lt 0 1 solid solutions
work_keys_str_mv AT harunsanim electronicandstructuralpropertiesofsnxti1xo200ltxlt01solidsolutions
AT oropezaf electronicandstructuralpropertiesofsnxti1xo200ltxlt01solidsolutions
AT palgraver electronicandstructuralpropertiesofsnxti1xo200ltxlt01solidsolutions
AT egdellr electronicandstructuralpropertiesofsnxti1xo200ltxlt01solidsolutions