Direct observation of hydrogen at defects in multicrystalline silicon
Hydrogen passivation is a key industrial technique used to reduce the recombination activity of defects in multicrystalline silicon (mc‐Si). However, not all dislocations and grain boundaries respond well to traditional hydrogen passivation techniques. In order to understand the reasons for these di...
| المؤلفون الرئيسيون: | , , , , , |
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| التنسيق: | Journal article |
| اللغة: | English |
| منشور في: |
Wiley
2019
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| _version_ | 1826309338733477888 |
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| author | Tweddle, D Hamer, P Shen, Z Markevich, VP Moody, MP Wilshaw, PR |
| author_facet | Tweddle, D Hamer, P Shen, Z Markevich, VP Moody, MP Wilshaw, PR |
| author_sort | Tweddle, D |
| collection | OXFORD |
| description | Hydrogen passivation is a key industrial technique used to reduce the recombination activity of defects in multicrystalline silicon (mc‐Si). However, not all dislocations and grain boundaries respond well to traditional hydrogen passivation techniques. In order to understand the reasons for these different behaviours, and how superior passivation might be achieved, a method is required for the direct observation of hydrogen at these defects. Here, we present a novel characterisation technique based on a combination of transmission Kikuchi diffraction (TKD), atom probe tomography (APT), and isotopic substitution that enables unambiguous detection and quantification of hydrogen atoms present at crystallographic defects in mc‐Si. |
| first_indexed | 2024-03-07T07:34:13Z |
| format | Journal article |
| id | oxford-uuid:f9414f29-d0f0-4c04-8380-a7e5b8878f14 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T07:34:13Z |
| publishDate | 2019 |
| publisher | Wiley |
| record_format | dspace |
| spelling | oxford-uuid:f9414f29-d0f0-4c04-8380-a7e5b8878f142023-02-10T08:33:41ZDirect observation of hydrogen at defects in multicrystalline siliconJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:f9414f29-d0f0-4c04-8380-a7e5b8878f14EnglishSymplectic Elements at OxfordWiley2019Tweddle, DHamer, PShen, ZMarkevich, VPMoody, MPWilshaw, PRHydrogen passivation is a key industrial technique used to reduce the recombination activity of defects in multicrystalline silicon (mc‐Si). However, not all dislocations and grain boundaries respond well to traditional hydrogen passivation techniques. In order to understand the reasons for these different behaviours, and how superior passivation might be achieved, a method is required for the direct observation of hydrogen at these defects. Here, we present a novel characterisation technique based on a combination of transmission Kikuchi diffraction (TKD), atom probe tomography (APT), and isotopic substitution that enables unambiguous detection and quantification of hydrogen atoms present at crystallographic defects in mc‐Si. |
| spellingShingle | Tweddle, D Hamer, P Shen, Z Markevich, VP Moody, MP Wilshaw, PR Direct observation of hydrogen at defects in multicrystalline silicon |
| title | Direct observation of hydrogen at defects in multicrystalline silicon |
| title_full | Direct observation of hydrogen at defects in multicrystalline silicon |
| title_fullStr | Direct observation of hydrogen at defects in multicrystalline silicon |
| title_full_unstemmed | Direct observation of hydrogen at defects in multicrystalline silicon |
| title_short | Direct observation of hydrogen at defects in multicrystalline silicon |
| title_sort | direct observation of hydrogen at defects in multicrystalline silicon |
| work_keys_str_mv | AT tweddled directobservationofhydrogenatdefectsinmulticrystallinesilicon AT hamerp directobservationofhydrogenatdefectsinmulticrystallinesilicon AT shenz directobservationofhydrogenatdefectsinmulticrystallinesilicon AT markevichvp directobservationofhydrogenatdefectsinmulticrystallinesilicon AT moodymp directobservationofhydrogenatdefectsinmulticrystallinesilicon AT wilshawpr directobservationofhydrogenatdefectsinmulticrystallinesilicon |