Direct observation of hydrogen at defects in multicrystalline silicon

Direct observation of hydrogen at defects in multicrystalline silicon

Hydrogen passivation is a key industrial technique used to reduce the recombination activity of defects in multicrystalline silicon (mc‐Si). However, not all dislocations and grain boundaries respond well to traditional hydrogen passivation techniques. In order to understand the reasons for these di...

Бүрэн тодорхойлолт

Номзүйн дэлгэрэнгүй
Үндсэн зохиолчид:	Tweddle, D, Hamer, P, Shen, Z, Markevich, VP, Moody, MP, Wilshaw, PR
Формат:	Journal article
Хэл сонгох:	English
Хэвлэсэн:	Wiley 2019

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