Direct observation of hydrogen at defects in multicrystalline silicon

Direct observation of hydrogen at defects in multicrystalline silicon

Hydrogen passivation is a key industrial technique used to reduce the recombination activity of defects in multicrystalline silicon (mc‐Si). However, not all dislocations and grain boundaries respond well to traditional hydrogen passivation techniques. In order to understand the reasons for these di...

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Chi tiết về thư mục
Những tác giả chính:	Tweddle, D, Hamer, P, Shen, Z, Markevich, VP, Moody, MP, Wilshaw, PR
Định dạng:	Journal article
Ngôn ngữ:	English
Được phát hành:	Wiley 2019

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