The indentation response of GaAs-AlAs heterostructures
Low-load indentation has been used to investigate the deformation behaviour of a submicron layer of AlAs on a GaAs substrate. High-resolution scanning electron microscopy of cross-sections through the deformed regions under indentations into this structure reveals that the softer AlAs layer is not p...
| Главные авторы: | , , |
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| Формат: | Conference item |
| Опубликовано: |
1996
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