The indentation response of GaAs-AlAs heterostructures
Low-load indentation has been used to investigate the deformation behaviour of a submicron layer of AlAs on a GaAs substrate. High-resolution scanning electron microscopy of cross-sections through the deformed regions under indentations into this structure reveals that the softer AlAs layer is not p...
| Auteurs principaux: | , , |
|---|---|
| Format: | Conference item |
| Publié: |
1996
|