The indentation response of GaAs-AlAs heterostructures

The indentation response of GaAs-AlAs heterostructures

Low-load indentation has been used to investigate the deformation behaviour of a submicron layer of AlAs on a GaAs substrate. High-resolution scanning electron microscopy of cross-sections through the deformed regions under indentations into this structure reveals that the softer AlAs layer is not p...

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Dettagli Bibliografici
Autori principali:	Castell, M, Shafirstein, G, Ritchie, D
Natura:	Conference item
Pubblicazione:	1996

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