The indentation response of GaAs-AlAs heterostructures

The indentation response of GaAs-AlAs heterostructures

Low-load indentation has been used to investigate the deformation behaviour of a submicron layer of AlAs on a GaAs substrate. High-resolution scanning electron microscopy of cross-sections through the deformed regions under indentations into this structure reveals that the softer AlAs layer is not p...

Полное описание

Библиографические подробности
Главные авторы:	Castell, M, Shafirstein, G, Ritchie, D
Формат:	Conference item
Опубликовано:	1996

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