The indentation response of GaAs-AlAs heterostructures
Low-load indentation has been used to investigate the deformation behaviour of a submicron layer of AlAs on a GaAs substrate. High-resolution scanning electron microscopy of cross-sections through the deformed regions under indentations into this structure reveals that the softer AlAs layer is not p...
| Những tác giả chính: | , , |
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| Định dạng: | Conference item |
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1996
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