The effect of substrate and surface plasmons on symmetry breaking at the substrate interface of the topological insulator Bi2Te3
A pressing challenge in engineering devices with topological insulators (TIs) is that electron transport is dominated by the bulk conductance, and so dissipationless surface states account for only a small fraction of the conductance. Enhancing the surface-to-volume ratio is a common method to enhan...
| मुख्य लेखकों: | , , , , , , , , , , |
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| स्वरूप: | Journal article |
| प्रकाशित: |
Nature Research
2019
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| _version_ | 1826306450682544128 |
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| author | Wiesner, M Roberts, RH Lin, J-F Akinwande, D Hesjedal, T Duffy, LB Wang, S Song, Y Jenczyk, J Jurga, S Mroz, B |
| author_facet | Wiesner, M Roberts, RH Lin, J-F Akinwande, D Hesjedal, T Duffy, LB Wang, S Song, Y Jenczyk, J Jurga, S Mroz, B |
| author_sort | Wiesner, M |
| collection | OXFORD |
| description | A pressing challenge in engineering devices with topological insulators (TIs) is that electron transport is dominated by the bulk conductance, and so dissipationless surface states account for only a small fraction of the conductance. Enhancing the surface-to-volume ratio is a common method to enhance the relative contribution of such states. In thin films with reduced thickness, the confinement results in symmetry-breaking and is critical for the experimental observation of topologically protected surface states. We employ micro-Raman and tip-enhanced Raman spectroscopy to examine three different mechanisms of symmetry breaking in Bi2Te3 TI thin films: surface plasmon generation, charge transfer, and application of a periodic strain potential. These mechanisms are facilitated by semiconducting and insulating substrates that modify the electronic and mechanical conditions at the sample surface and alter the long-range interactions between Bi2Te3 and the substrate. We confirm the symmetry breaking in Bi2Te3 via the emergence of the Raman-forbidden ܣଵ௨ ଶ mode. Our results suggest that topological surface states can exist at the Bi2Te3/substrate interface, which is in a good agreement with previous theoretical results predicting the tunability of the vertical location of helical surface states in TI/substrate heterostructures. |
| first_indexed | 2024-03-07T06:48:08Z |
| format | Journal article |
| id | oxford-uuid:fb8f3bc6-6a3e-4650-9f1b-1a3bcb24e693 |
| institution | University of Oxford |
| last_indexed | 2024-03-07T06:48:08Z |
| publishDate | 2019 |
| publisher | Nature Research |
| record_format | dspace |
| spelling | oxford-uuid:fb8f3bc6-6a3e-4650-9f1b-1a3bcb24e6932022-03-27T13:14:46ZThe effect of substrate and surface plasmons on symmetry breaking at the substrate interface of the topological insulator Bi2Te3Journal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:fb8f3bc6-6a3e-4650-9f1b-1a3bcb24e693Symplectic Elements at OxfordNature Research2019Wiesner, MRoberts, RHLin, J-FAkinwande, DHesjedal, TDuffy, LBWang, SSong, YJenczyk, JJurga, SMroz, BA pressing challenge in engineering devices with topological insulators (TIs) is that electron transport is dominated by the bulk conductance, and so dissipationless surface states account for only a small fraction of the conductance. Enhancing the surface-to-volume ratio is a common method to enhance the relative contribution of such states. In thin films with reduced thickness, the confinement results in symmetry-breaking and is critical for the experimental observation of topologically protected surface states. We employ micro-Raman and tip-enhanced Raman spectroscopy to examine three different mechanisms of symmetry breaking in Bi2Te3 TI thin films: surface plasmon generation, charge transfer, and application of a periodic strain potential. These mechanisms are facilitated by semiconducting and insulating substrates that modify the electronic and mechanical conditions at the sample surface and alter the long-range interactions between Bi2Te3 and the substrate. We confirm the symmetry breaking in Bi2Te3 via the emergence of the Raman-forbidden ܣଵ௨ ଶ mode. Our results suggest that topological surface states can exist at the Bi2Te3/substrate interface, which is in a good agreement with previous theoretical results predicting the tunability of the vertical location of helical surface states in TI/substrate heterostructures. |
| spellingShingle | Wiesner, M Roberts, RH Lin, J-F Akinwande, D Hesjedal, T Duffy, LB Wang, S Song, Y Jenczyk, J Jurga, S Mroz, B The effect of substrate and surface plasmons on symmetry breaking at the substrate interface of the topological insulator Bi2Te3 |
| title | The effect of substrate and surface plasmons on symmetry breaking at the substrate interface of the topological insulator Bi2Te3 |
| title_full | The effect of substrate and surface plasmons on symmetry breaking at the substrate interface of the topological insulator Bi2Te3 |
| title_fullStr | The effect of substrate and surface plasmons on symmetry breaking at the substrate interface of the topological insulator Bi2Te3 |
| title_full_unstemmed | The effect of substrate and surface plasmons on symmetry breaking at the substrate interface of the topological insulator Bi2Te3 |
| title_short | The effect of substrate and surface plasmons on symmetry breaking at the substrate interface of the topological insulator Bi2Te3 |
| title_sort | effect of substrate and surface plasmons on symmetry breaking at the substrate interface of the topological insulator bi2te3 |
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