Real-space visualization of energy loss and carrier diffusion in a semiconductor nanowire array using 4D electron microscopy
A breakthrough in the development of 4D scanning ultrafast electron microscopy is described for real-time and space imaging of secondary electron energy loss and carrier diffusion on the surface of an array of nanowires as a model system, providing access to a territory that is beyond the reach of e...
Main Authors: | Bose, R, Sun, J, Khan, J, Shaheen, B, Adhikari, A, Ng, T, Burlakov, V, Parida, M, Priante, D, Goriely, A, Ooi, B, Bakr, O, Mohammed, O |
---|---|
Format: | Journal article |
Language: | English |
Published: |
Wiley
2016
|
Similar Items
-
Imaging localized energy states in silicon-doped InGaN nanowires using 4D electron microscopy
by: Bose, R, et al.
Published: (2018) -
Absorption of Light in Finite Semiconductor Nanowire Arrays and the Effect of Missing Nanowires
by: Nicklas Anttu
Published: (2021-09-01) -
Ligand-assisted growth of nanowires from solution
by: Burlakov, VM, et al.
Published: (2021) -
New Applications of Electrochemically Produced Porous Semiconductors and Nanowire Arrays
by: Leisner Malte, et al.
Published: (2010-01-01) -
Properties of Spatially Indirect Excitons in Nanowire Arrays
by: Vladimir N. Pyrkov, et al.
Published: (2022-05-01)