ANTIMONY-DOPED TIN(IV) OXIDE - SURFACE-COMPOSITION AND ELECTRONIC-STRUCTURE
Antimony-doped tin(IV) oxide Sn1-xSbxO2 prepared by a high-temperature (1300 K) solid-state synthetic procedure has been studied over the composition range0 < x < 0.03by X-ray and ultraviolet photoelectron spectroscopy (XPS and UPS) and high-resolution electron-energy-loss spectroscopy...
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| Format: | Journal article |
| Language: | English |
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1984
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| _version_ | 1797105870094467072 |
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| author | Egdell, R Flavell, W Tavener, P |
| author_facet | Egdell, R Flavell, W Tavener, P |
| author_sort | Egdell, R |
| collection | OXFORD |
| description | Antimony-doped tin(IV) oxide Sn1-xSbxO2 prepared by a high-temperature (1300 K) solid-state synthetic procedure has been studied over the composition range0 < x < 0.03by X-ray and ultraviolet photoelectron spectroscopy (XPS and UPS) and high-resolution electron-energy-loss spectroscopy (HREELS). Pronounced enrichment by antimony close to the surface is evident from XPS with a heat of segregation approaching 30 kJ/mole. However, no increase in the surface free-carrier concentration is evident from the conduction-to-valence band intensity ratio in UPS or from the surface plasmon frequency in EELS. It is concluded that electrons associated with segregated Sb ions occupy a lone-pair-likesp hybrid surface state whose energy lies well below that of the conduction band. © 1984 Academic Press, Inc. |
| first_indexed | 2024-03-07T06:53:31Z |
| format | Journal article |
| id | oxford-uuid:fd55e59e-4679-4301-bd7e-9ead5d63a5a2 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T06:53:31Z |
| publishDate | 1984 |
| record_format | dspace |
| spelling | oxford-uuid:fd55e59e-4679-4301-bd7e-9ead5d63a5a22022-03-27T13:28:07ZANTIMONY-DOPED TIN(IV) OXIDE - SURFACE-COMPOSITION AND ELECTRONIC-STRUCTUREJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:fd55e59e-4679-4301-bd7e-9ead5d63a5a2EnglishSymplectic Elements at Oxford1984Egdell, RFlavell, WTavener, PAntimony-doped tin(IV) oxide Sn1-xSbxO2 prepared by a high-temperature (1300 K) solid-state synthetic procedure has been studied over the composition range0 < x < 0.03by X-ray and ultraviolet photoelectron spectroscopy (XPS and UPS) and high-resolution electron-energy-loss spectroscopy (HREELS). Pronounced enrichment by antimony close to the surface is evident from XPS with a heat of segregation approaching 30 kJ/mole. However, no increase in the surface free-carrier concentration is evident from the conduction-to-valence band intensity ratio in UPS or from the surface plasmon frequency in EELS. It is concluded that electrons associated with segregated Sb ions occupy a lone-pair-likesp hybrid surface state whose energy lies well below that of the conduction band. © 1984 Academic Press, Inc. |
| spellingShingle | Egdell, R Flavell, W Tavener, P ANTIMONY-DOPED TIN(IV) OXIDE - SURFACE-COMPOSITION AND ELECTRONIC-STRUCTURE |
| title | ANTIMONY-DOPED TIN(IV) OXIDE - SURFACE-COMPOSITION AND ELECTRONIC-STRUCTURE |
| title_full | ANTIMONY-DOPED TIN(IV) OXIDE - SURFACE-COMPOSITION AND ELECTRONIC-STRUCTURE |
| title_fullStr | ANTIMONY-DOPED TIN(IV) OXIDE - SURFACE-COMPOSITION AND ELECTRONIC-STRUCTURE |
| title_full_unstemmed | ANTIMONY-DOPED TIN(IV) OXIDE - SURFACE-COMPOSITION AND ELECTRONIC-STRUCTURE |
| title_short | ANTIMONY-DOPED TIN(IV) OXIDE - SURFACE-COMPOSITION AND ELECTRONIC-STRUCTURE |
| title_sort | antimony doped tin iv oxide surface composition and electronic structure |
| work_keys_str_mv | AT egdellr antimonydopedtinivoxidesurfacecompositionandelectronicstructure AT flavellw antimonydopedtinivoxidesurfacecompositionandelectronicstructure AT tavenerp antimonydopedtinivoxidesurfacecompositionandelectronicstructure |