Towards registered single quantum dot photonic devices.

We have registered the position and wavelength of a single InGaAs quantum dot using an innovative cryogenic laser lithography technique. This approach provides accurate marking of the location of self-organized dots and is particularly important for realizing any solid-state cavity quantum electrody...

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Detalhes bibliográficos
Principais autores: Lee, K, Brossard, F, Hadjipanayi, M, Xu, X, Waldermann, F, Green, A, Sharp, D, Turberfield, A, Williams, D, Taylor, R
Formato: Journal article
Idioma:English
Publicado em: 2008
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author Lee, K
Brossard, F
Hadjipanayi, M
Xu, X
Waldermann, F
Green, A
Sharp, D
Turberfield, A
Williams, D
Taylor, R
author_facet Lee, K
Brossard, F
Hadjipanayi, M
Xu, X
Waldermann, F
Green, A
Sharp, D
Turberfield, A
Williams, D
Taylor, R
author_sort Lee, K
collection OXFORD
description We have registered the position and wavelength of a single InGaAs quantum dot using an innovative cryogenic laser lithography technique. This approach provides accurate marking of the location of self-organized dots and is particularly important for realizing any solid-state cavity quantum electrodynamics scheme where the overlap of the spectral and spatial characteristics of an emitter and a cavity is essential. We demonstrate progress in two key areas towards efficient single quantum dot photonic device implementation. Firstly, we show the registration and reacquisition of a single quantum dot with 50 and 150 nm accuracy, respectively. Secondly, we present data on the successful fabrication of a photonic crystal L3 cavity following the registration process.
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spelling oxford-uuid:fe2723a4-76e4-4deb-84fe-b64ad34d34c12022-03-27T13:34:09ZTowards registered single quantum dot photonic devices.Journal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:fe2723a4-76e4-4deb-84fe-b64ad34d34c1EnglishSymplectic Elements at Oxford2008Lee, KBrossard, FHadjipanayi, MXu, XWaldermann, FGreen, ASharp, DTurberfield, AWilliams, DTaylor, RWe have registered the position and wavelength of a single InGaAs quantum dot using an innovative cryogenic laser lithography technique. This approach provides accurate marking of the location of self-organized dots and is particularly important for realizing any solid-state cavity quantum electrodynamics scheme where the overlap of the spectral and spatial characteristics of an emitter and a cavity is essential. We demonstrate progress in two key areas towards efficient single quantum dot photonic device implementation. Firstly, we show the registration and reacquisition of a single quantum dot with 50 and 150 nm accuracy, respectively. Secondly, we present data on the successful fabrication of a photonic crystal L3 cavity following the registration process.
spellingShingle Lee, K
Brossard, F
Hadjipanayi, M
Xu, X
Waldermann, F
Green, A
Sharp, D
Turberfield, A
Williams, D
Taylor, R
Towards registered single quantum dot photonic devices.
title Towards registered single quantum dot photonic devices.
title_full Towards registered single quantum dot photonic devices.
title_fullStr Towards registered single quantum dot photonic devices.
title_full_unstemmed Towards registered single quantum dot photonic devices.
title_short Towards registered single quantum dot photonic devices.
title_sort towards registered single quantum dot photonic devices
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AT xux towardsregisteredsinglequantumdotphotonicdevices
AT waldermannf towardsregisteredsinglequantumdotphotonicdevices
AT greena towardsregisteredsinglequantumdotphotonicdevices
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AT turberfielda towardsregisteredsinglequantumdotphotonicdevices
AT williamsd towardsregisteredsinglequantumdotphotonicdevices
AT taylorr towardsregisteredsinglequantumdotphotonicdevices