Highly conducting and optically transparent Si-doped ZnO thin films prepared by spray pyrolysis
We report the fabrication and investigation of highly conducting and optically transparent ZnO thin films prepared by the spray pyrolysis technique. Undoped and Si-doped ZnO thin films were deposited on glass substrates at deposition temperatures between 250 °C and 500 °C from a precursor solution c...
| Main Authors: | , , , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
2013
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| _version_ | 1797106130430722048 |
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| author | Rashidi, N Kuznetsov, V Dilworth, JR Pepper, M Dobson, P Edwards, P |
| author_facet | Rashidi, N Kuznetsov, V Dilworth, JR Pepper, M Dobson, P Edwards, P |
| author_sort | Rashidi, N |
| collection | OXFORD |
| description | We report the fabrication and investigation of highly conducting and optically transparent ZnO thin films prepared by the spray pyrolysis technique. Undoped and Si-doped ZnO thin films were deposited on glass substrates at deposition temperatures between 250 °C and 500 °C from a precursor solution containing zinc acetylacetonate and silicon tetraacetate. X-ray diffraction analysis confirms that the deposited films have the wurtzite ZnO structure with individual crystallite sizes varying between 65 and 122 nm. The optical transparency of the films in the visible range is in the range of 80-85%. The effect of deposition temperature and Si dopant concentration on structural, optical and electrical properties of Si-doped films was investigated. For 3% Si-doped ZnO films the electrical resistivity and carrier concentration reached values of 3.7 × 10-3 Ωcm and 1.7 × 1020 cm-3, respectively. The temperature dependence of the electrical transport properties were measured across the range of 77-350 K. The carrier concentration for all the films is practically temperature independent, illustrating that the samples are degenerate semiconductors. Interestingly, a temperature-activated Hall mobility is observed for the thin films over the whole temperature range of measurements. This is attributed to the thermionic emission of free electrons across potential barriers formed between grains. Si-doped ZnO thin films prepared by a vacuum-free solution-based technique can provide cost-effective transparent conducting layers for optoelectronic and energy applications. This journal is © 2013 The Royal Society of Chemistry. |
| first_indexed | 2024-03-07T06:57:21Z |
| format | Journal article |
| id | oxford-uuid:fe930964-e6b8-4f93-b56b-29141da38eef |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T06:57:21Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | oxford-uuid:fe930964-e6b8-4f93-b56b-29141da38eef2022-03-27T13:37:49ZHighly conducting and optically transparent Si-doped ZnO thin films prepared by spray pyrolysisJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:fe930964-e6b8-4f93-b56b-29141da38eefEnglishSymplectic Elements at Oxford2013Rashidi, NKuznetsov, VDilworth, JRPepper, MDobson, PEdwards, PWe report the fabrication and investigation of highly conducting and optically transparent ZnO thin films prepared by the spray pyrolysis technique. Undoped and Si-doped ZnO thin films were deposited on glass substrates at deposition temperatures between 250 °C and 500 °C from a precursor solution containing zinc acetylacetonate and silicon tetraacetate. X-ray diffraction analysis confirms that the deposited films have the wurtzite ZnO structure with individual crystallite sizes varying between 65 and 122 nm. The optical transparency of the films in the visible range is in the range of 80-85%. The effect of deposition temperature and Si dopant concentration on structural, optical and electrical properties of Si-doped films was investigated. For 3% Si-doped ZnO films the electrical resistivity and carrier concentration reached values of 3.7 × 10-3 Ωcm and 1.7 × 1020 cm-3, respectively. The temperature dependence of the electrical transport properties were measured across the range of 77-350 K. The carrier concentration for all the films is practically temperature independent, illustrating that the samples are degenerate semiconductors. Interestingly, a temperature-activated Hall mobility is observed for the thin films over the whole temperature range of measurements. This is attributed to the thermionic emission of free electrons across potential barriers formed between grains. Si-doped ZnO thin films prepared by a vacuum-free solution-based technique can provide cost-effective transparent conducting layers for optoelectronic and energy applications. This journal is © 2013 The Royal Society of Chemistry. |
| spellingShingle | Rashidi, N Kuznetsov, V Dilworth, JR Pepper, M Dobson, P Edwards, P Highly conducting and optically transparent Si-doped ZnO thin films prepared by spray pyrolysis |
| title | Highly conducting and optically transparent Si-doped ZnO thin films prepared by spray pyrolysis |
| title_full | Highly conducting and optically transparent Si-doped ZnO thin films prepared by spray pyrolysis |
| title_fullStr | Highly conducting and optically transparent Si-doped ZnO thin films prepared by spray pyrolysis |
| title_full_unstemmed | Highly conducting and optically transparent Si-doped ZnO thin films prepared by spray pyrolysis |
| title_short | Highly conducting and optically transparent Si-doped ZnO thin films prepared by spray pyrolysis |
| title_sort | highly conducting and optically transparent si doped zno thin films prepared by spray pyrolysis |
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