Growth of InGaN quantum dots with AlGaN barrier layers via modified droplet epitaxy
Main Authors: | Oliver, R, El-Ella, H, Collins, D, Reid, B, Zhang, Y, Christie, F, Kappers, M, Taylor, R |
---|---|
Format: | Journal article |
Published: |
2013
|
Similar Items
-
InGaN quantum dots grown by MOVPE via a droplet epitaxy route
by: Rice, J, et al.
Published: (2004) -
Growth and optical characterisation of multilayers of InGaN quantum dots
by: Zhu, T, et al.
Published: (2012) -
Evidence for impact ionisation in AlGaN/GaN HEMTs with InGaN back-barrier
by: Palacios, Tomas, et al.
Published: (2012) -
Optical cavity efficacy and lasing of focused ion beam milled GaN/InGaN micropillars
by: El-Ella, H, et al.
Published: (2012) -
Electrically driven single InGaN/GaN quantum dot emission
by: Jarjour, A, et al.
Published: (2008)