Minigaps and the quantum Hall effect in broken gap InAs/GaSb heterostructures

Minigaps and the quantum Hall effect in broken gap InAs/GaSb heterostructures

InAs/GaSb heterojunctions offer the unique situation in a semiconductor of overlapping conduction and valence bands. A wavevector dependent minigap occurs due to the anticrossing of the electron and hole dispersion relations. As a result the resistivity increases strongly in very pure intrinsic stru...

Disgrifiad llawn

Manylion Llyfryddiaeth
Prif Awduron:	Nicholas, R, Lakrimi, M, Khym, S, Mason, N, Poulter, A, Vaughan, T, Walker, P, Maude, D, Portal, J, Symons, D, Peeters, F
Fformat:	Conference item
Cyhoeddwyd:	1998

Eitemau Tebyg

Minigaps and novel giant negative magnetoresistance in InAs/GaSb semimetallic superlattices
gan: Lakrimi, M, et al.
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Optical probing of the minigap in InAs/GaSb superlattices
gan: Poulter, A, et al.
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Optical probing of the minigap in InAs/GaSb superlattices
gan: Poulter, A, et al.
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Magnetic breakdown in the semimetallic InAs/GaSb system
gan: Symons, D, et al.
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Magnetic breakdown in the semimetallic InAs/GaSb system
gan: Symons, D, et al.
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Mini-gaps and novel giant negative magnetoresistance in InAs/GaSb semimetallic superlattices
gan: Lakrimi, M, et al.
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Zero-Hall-resistance state in a semimetallic InAs/GaSb superlattice
gan: Daly, MS, et al.
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Magneto-optics of InAs/GaSb heterostructures
gan: Vaughan, T, et al.
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Intersubband transitions in InAs GaSb semimetallic superlattices
gan: Poulter, A, et al.
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Electron-hole interactions and metal-insulator transitions in InAs/GaSb heterostructures
gan: Nicholas, R, et al.
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Intersubband transitions in InAs/GaSb semi-metallic superlattices
gan: Poulter, A, et al.
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Interface composition dependence of the band offset in InAs/GaSb
gan: Daly, MS, et al.
Cyhoeddwyd: (1996)

Interface composition dependence of the band offset in InAs/GaSb
gan: Daly, MS, et al.
Cyhoeddwyd: (1996)

Thermopower and conductivity of InAs/GaSb crossed-gap heterostructures in a magnetic field
gan: Cao, S, et al.
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Intersubband transitions in InAs/GaSb superlattices in a parallel magnetic field
gan: De Meester, R, et al.
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Long wavelength photoresponse of short period InAs/GaSb superlattices
gan: Lakrimi, M, et al.
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The quantum Hall effect in an InAs/GaSb based electron-hole system and its current-driven breakdown
gan: Takashina, K, et al.
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Intersubband lifetimes in InAs/GaSb superlattices using saturated absorption spectroscopy
gan: Poulter, A, et al.
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Perpendicular and parallel magnetic field transport measurements in gated InAs/GaSb DHETs
gan: Lakrimi, M, et al.
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PRESSURE INVESTIGATION OF THE QUANTUM HALL-EFFECT IN INTRINSIC SEMIMETALLIC INAS/(GA,IN)SB HETEROSTRUCTURES
gan: Daly, M, et al.
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Nano-Ridge Engineering of GaSb for the Integration of InAs/GaSb Heterostructures on 300 mm (001) Si
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Effects of electron-hole hybridization on cyclotron resonance in InAs/GaSb heterostructures
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Vertical transport and electroluminescence in InAs/GaSb/InAs structures: GaSb thickness and hydrostatic pressure studies
gan: Roberts, M, et al.
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TEMPERATURE-DEPENDENCE OF THE BAND OVERLAP IN INAS/GASB STRUCTURES
gan: Symons, D, et al.
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MAGNETOTRANSPORT STUDIES OF GASB/INAS CROSSED GAP HETEROSTRUCTURES IN HIGH MAGNETIC-FIELDS
gan: Dalton, K, et al.
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GROWTH OF INAS/GASB STRAINED-LAYER SUPERLATTICES .1.
gan: Booker, G, et al.
Cyhoeddwyd: (1994)

Magnetoresistance of vertical transport in InAs/GaSb superlattices
gan: Broadley, V, et al.
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CYCLOTRON-RESONANCE IN INAS/GASB HETEROSTRUCTURES
gan: Sundaram, G, et al.
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Cyclotron resonance in an asymmetric electron-hole InAs/GaSb DHET structure
gan: Petchsingh, C, et al.
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Temperature-dependent cyclotron resonance in a hybridized electron-hole system in InAs/GaSb heterostructures
gan: Petchsingh, C, et al.
Cyhoeddwyd: (2007)

Growth of InAs/GaSb strained layer superlattices by MOVPE .3. Use of UV absorption to monitor alkyl stability in the reactor
gan: Booker, G, et al.
Cyhoeddwyd: (1997)

The Effect of GaSb Substrate Oxidation Layer on InAs/GaSb Type II Superlattice
gan: Jiabo Liu, et al.
Cyhoeddwyd: (2023-03-01)

ONE-DIMENSIONAL TRANSPORT AND GATING OF INAS/GASB STRUCTURES
gan: Chen, Y, et al.
Cyhoeddwyd: (1994)

ORIENTATION AND PRESSURE-DEPENDENCE OF THE BAND OVERLAP IN INAS/GASB STRUCTURES
gan: Symons, D, et al.
Cyhoeddwyd: (1994)

CYCLOTRON AND INTERSUBBAND RESONANCE STUDIES IN [001] AND PIEZOELECTRIC [111] INAS/(GA,IN)SB SUPERLATTICES
gan: Lakrimi, M, et al.
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GROWTH OF INAS/GASB STRAINED-LAYER SUPERLATTICES .2.
gan: Booker, G, et al.
Cyhoeddwyd: (1995)

Miniband transport and stark-cyclotron-resonance in InAs/GaSb superlattices
gan: Hales, V, et al.
Cyhoeddwyd: (2001)

High field magnetotransport in strongly coupled InAs/GaSb superlattices
gan: Deacon, R, et al.
Cyhoeddwyd: (2004)

Edge transport in the trivial phase of InAs/GaSb
gan: Fabrizio Nichele, et al.
Cyhoeddwyd: (2016-01-01)

Theory of the band mixing induced negative magnetoresistance in broken gap superlattices
gan: Symons, D, et al.
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