Minigaps and the quantum Hall effect in broken gap InAs/GaSb heterostructures
InAs/GaSb heterojunctions offer the unique situation in a semiconductor of overlapping conduction and valence bands. A wavevector dependent minigap occurs due to the anticrossing of the electron and hole dispersion relations. As a result the resistivity increases strongly in very pure intrinsic stru...
Үндсэн зохиолчид: | Nicholas, R, Lakrimi, M, Khym, S, Mason, N, Poulter, A, Vaughan, T, Walker, P, Maude, D, Portal, J, Symons, D, Peeters, F |
---|---|
Формат: | Conference item |
Хэвлэсэн: |
1998
|
Ижил төстэй зүйлс
Ижил төстэй зүйлс
-
Minigaps and novel giant negative magnetoresistance in InAs/GaSb semimetallic superlattices
-н: Lakrimi, M, зэрэг
Хэвлэсэн: (1997) -
Optical probing of the minigap in InAs/GaSb superlattices
-н: Poulter, A, зэрэг
Хэвлэсэн: (1998) -
Optical probing of the minigap in InAs/GaSb superlattices
-н: Poulter, A, зэрэг
Хэвлэсэн: (1999) -
Magnetic breakdown in the semimetallic InAs/GaSb system
-н: Symons, D, зэрэг
Хэвлэсэн: (1998) -
Magnetic breakdown in the semimetallic InAs/GaSb system
-н: Symons, D, зэрэг
Хэвлэсэн: (1998)