INVESTIGATIONS OF METAL-SILICON INTERFACES BY TIME-OF-FLIGHT ATOM PROBE.

Documenti analoghi

• THE CHARACTERIZATION OF SILICON SURFACES BY TIME-OF-FLIGHT ATOM PROBE ANALYSIS
  di: Grovenor, C, et al.
  Pubblicazione: (1982)
• ATOM PROBE STUDIES OF THE COMPOSITION OF LOW-TEMPERATURE OXIDES ON (100) SILICON AND GALLIUM-ARSENIDE SURFACES
  di: Grovenor, C, et al.
  Pubblicazione: (1989)
• APPLICATION OF A POSITION-SENSITIVE ATOM PROBE TO THE ANALYSIS OF THE CHEMISTRY AND MORPHOLOGY OF MULTI-QUANTUM-WELL INTERFACES
  di: Cerezo, A, et al.
  Pubblicazione: (1989)
• RECENT DEVELOPMENTS IN THE STUDY OF SEMICONDUCTORS BY ATOM PROBE MICROANALYSIS.
  di: Grovenor, C, et al.
  Pubblicazione: (1985)
• PULSED LASER ATOM PROBE ANALYSIS OF GAAS AND INAS
  di: Cerezo, A, et al.
  Pubblicazione: (1985)