Study on the performance enhancement mechanism of the mosfet device based on Si/SiGe strained silicon / Hashimah Hashim and Ahmad Sabirin Zoolfakar
This research is carried out to deposit and characterizes nanostructured Zinc Oxide (ZnO) thin film by radio frequency (RF) magnetron sputtering method for ammonia (NH3 ) gas sensor application. The sensitivity of sensor is mainly depends on the surface reaction effect which strongly depends on the...
Main Authors: | Hashim, Hashimah, Zoolfakar, Ahmad Sabirin |
---|---|
Format: | Research Reports |
Language: | English |
Published: |
2007
|
Subjects: | |
Online Access: | https://ir.uitm.edu.my/id/eprint/20366/1/20366.pdf |
Similar Items
-
Pemilihan bahan kapsul kukuh bagi peranti MEMS di bawah tekanan tinggi / Yusnira Husaini, Ahmad Sabirin Zoolfakar and Mas Izyani Md. Ali
by: Husaini, Yusnira, et al.
Published: (2009) -
Si/SiGe heterointerfaces in one-, two-, and three-dimensional nanostructures: their impact on SiGe light emission
by: David J. Lockwood, et al.
Published: (2016-03-01) -
MOSFET Channel Engineering using Strained Si, SiGe, and Ge Channels
by: Fitzgerald, Eugene A., et al.
Published: (2003) -
SiGe-On-Insulator (SGOI) Technology and MOSFET Fabrication
by: Cheng, Zhiyuan, et al.
Published: (2003) -
Nanoscale strained-Si/SiGe and double-gate MOSFET modeling
by: Karthik Chandrasekaran
Published: (2010)