Structural and electronic properties of orthorhombic phase Bi₂Se₃ based on first-principles study / Muhammad Zamir Mohyedin ... [et al.]

Bi₂Se₃ is one of the promising materials in thermoelectric devices and is environmentally friendly due to its efficiency to perform in room temperature. Structural and electronic properties of Bi2Se3 were investigated based on the first-principles calculation of density functional theory (DFT) using...

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Үндсэн зохиолчид: Mohyedin, Muhammad Zamir, Radzwan, Afiq, Mohamad Taib, Mohammad Fariz, Zakaria, Rosnah, Jaafar, Nor Kartini, Mustaffa, Masnawi, Ahmad Aini, Nazli
Формат: Өгүүллэг
Хэл сонгох:English
Хэвлэсэн: Penerbit UiTM (UiTM Press) 2019
Нөхцлүүд:
Онлайн хандалт:https://ir.uitm.edu.my/id/eprint/28257/1/28257.pdf
https://doi.org/10.24191/srj.v16i2.6359
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author Mohyedin, Muhammad Zamir
Radzwan, Afiq
Mohamad Taib, Mohammad Fariz
Zakaria, Rosnah
Jaafar, Nor Kartini
Mustaffa, Masnawi
Ahmad Aini, Nazli
author_facet Mohyedin, Muhammad Zamir
Radzwan, Afiq
Mohamad Taib, Mohammad Fariz
Zakaria, Rosnah
Jaafar, Nor Kartini
Mustaffa, Masnawi
Ahmad Aini, Nazli
author_sort Mohyedin, Muhammad Zamir
collection UITM
description Bi₂Se₃ is one of the promising materials in thermoelectric devices and is environmentally friendly due to its efficiency to perform in room temperature. Structural and electronic properties of Bi2Se3 were investigated based on the first-principles calculation of density functional theory (DFT) using CASTEP computer code. The calculation is conducted within the exchange-correlation of local density approximation (LDA) and generalised gradient approximation within the revision of Perdew-Burke-Ernzerhof (GGA-PBE) functional. A comparative study is carried out between the electronic properties of LDA and GGA-PBE. Lattice parameter and band gap are consistent with the other reports. Calculation from LDA is more accurate and has a better agreement than GGA-PBE in describing the lattice parameter of Bi2Se3. Band gap and density of states of LDA show higher electrical conductivity than GGA-PBE. Both LDA and GGA-PBE have same degree of thermal conductivity due to the occurrence of indirect band gap at same range of wave vector.
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spelling uitm.eprints-82572020-02-11T09:53:57Z https://ir.uitm.edu.my/id/eprint/28257/ Structural and electronic properties of orthorhombic phase Bi₂Se₃ based on first-principles study / Muhammad Zamir Mohyedin ... [et al.] srj Mohyedin, Muhammad Zamir Radzwan, Afiq Mohamad Taib, Mohammad Fariz Zakaria, Rosnah Jaafar, Nor Kartini Mustaffa, Masnawi Ahmad Aini, Nazli Devices for production of electricity by direct energy conversion Bi₂Se₃ is one of the promising materials in thermoelectric devices and is environmentally friendly due to its efficiency to perform in room temperature. Structural and electronic properties of Bi2Se3 were investigated based on the first-principles calculation of density functional theory (DFT) using CASTEP computer code. The calculation is conducted within the exchange-correlation of local density approximation (LDA) and generalised gradient approximation within the revision of Perdew-Burke-Ernzerhof (GGA-PBE) functional. A comparative study is carried out between the electronic properties of LDA and GGA-PBE. Lattice parameter and band gap are consistent with the other reports. Calculation from LDA is more accurate and has a better agreement than GGA-PBE in describing the lattice parameter of Bi2Se3. Band gap and density of states of LDA show higher electrical conductivity than GGA-PBE. Both LDA and GGA-PBE have same degree of thermal conductivity due to the occurrence of indirect band gap at same range of wave vector. Penerbit UiTM (UiTM Press) 2019 Article PeerReviewed text en https://ir.uitm.edu.my/id/eprint/28257/1/28257.pdf Structural and electronic properties of orthorhombic phase Bi₂Se₃ based on first-principles study / Muhammad Zamir Mohyedin ... [et al.]. (2019) Scientific Research Journal <https://ir.uitm.edu.my/view/publication/Scientific_Research_Journal/>, 16 (2). pp. 77-88. ISSN 1675-7009 https://srj.uitm.edu.my/ https://doi.org/10.24191/srj.v16i2.6359 https://doi.org/10.24191/srj.v16i2.6359
spellingShingle Devices for production of electricity by direct energy conversion
Mohyedin, Muhammad Zamir
Radzwan, Afiq
Mohamad Taib, Mohammad Fariz
Zakaria, Rosnah
Jaafar, Nor Kartini
Mustaffa, Masnawi
Ahmad Aini, Nazli
Structural and electronic properties of orthorhombic phase Bi₂Se₃ based on first-principles study / Muhammad Zamir Mohyedin ... [et al.]
title Structural and electronic properties of orthorhombic phase Bi₂Se₃ based on first-principles study / Muhammad Zamir Mohyedin ... [et al.]
title_full Structural and electronic properties of orthorhombic phase Bi₂Se₃ based on first-principles study / Muhammad Zamir Mohyedin ... [et al.]
title_fullStr Structural and electronic properties of orthorhombic phase Bi₂Se₃ based on first-principles study / Muhammad Zamir Mohyedin ... [et al.]
title_full_unstemmed Structural and electronic properties of orthorhombic phase Bi₂Se₃ based on first-principles study / Muhammad Zamir Mohyedin ... [et al.]
title_short Structural and electronic properties of orthorhombic phase Bi₂Se₃ based on first-principles study / Muhammad Zamir Mohyedin ... [et al.]
title_sort structural and electronic properties of orthorhombic phase bi₂se₃ based on first principles study muhammad zamir mohyedin et al
topic Devices for production of electricity by direct energy conversion
url https://ir.uitm.edu.my/id/eprint/28257/1/28257.pdf
https://doi.org/10.24191/srj.v16i2.6359
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