Structural and photoluminescence analysis on the implantation of carbon and proton for the creation of damage-assisted emission in silicon
We study the induced defects in the depth profiling of the silicon structure after being implanted with carbon and followed by high energy proton irradiation. It has been reported before that the formation of the optically active pointdefect, specifically the G-centre is due to the implantation and...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Penerbit Universiti Kebangsaan Malaysia
2020
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| Online Access: | http://journalarticle.ukm.my/16159/1/6.pdf |