ICP-RIE dry etching using Cl2-based on GaN

ICP-RIE dry etching using Cl2-based on GaN

In this study, the plasma characteristics and GaN etch properties of inductively coupled Cl2/Ar and Cl2/H2 plasmas were investigated. Our results showed that inductively coupled plasma (ICP) etching of gallium nitride by using Cl2/Ar and Cl2/H2 were possible to meet the requirements (anisotropy, h...

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Bibliographic Details
Main Authors:	Siti Azlina Rosli, Azlan Abdul Aziz, Md Roslan Hashim
Format:	Article
Language:	English
Published:	Universiti Kebangsaan Malaysia 2011
Online Access:	http://journalarticle.ukm.my/2454/1/18_Siti_Azlina.pdf

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