Effect of TMAH etching duration on the formation of silicon nanowire transistor patterned by AFM nanolithography
Atomic force microscopy (AFM) lithography was applied to produce nanoscale pattern for silicon nanowire transistor fabrication. This technique takes advantage of imaging facility of AFM and the ability of probe movement controlling over the sample surface to create nanopatterns. A conductive AFM tip...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
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Universiti Kebangsaan Malaysia
2012
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| Online Access: | http://journalarticle.ukm.my/5425/1/13%2520Sabar.pdf |