Characterization of AlInN layer grown on GaN/Sapphire substrate by MOCVD

Characterization of AlInN layer grown on GaN/Sapphire substrate by MOCVD

The AlInN layers have been grown with different growth parameters on GaN/sapphire substrates by metal-organic chemical vapor deposition (MOCVD). The effects of growth parameters such as pressure and temperature on the Al incorporation during AlInN material growth have been investigated. The results...

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Bibliographic Details
Main Authors:	Wei-Ching Huang, Edward-Yi Chang, Yuen-Yee Wong, Kung-Liang Lin, Yu-Lin Hsiao, Chang, Fu Dee, Burhanuddin Yeop Majlis
Format:	Article
Language:	English
Published:	Universiti Kebangsaan Malaysia 2013
Online Access:	http://journalarticle.ukm.my/5911/1/19%2520Wei-Ching%2520Huang.pdf

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