An analysis of the electron trajectory in the vicinity of GaAs quantum dot

Quantum dots being an interesting class of nanostructures are considered potential prototype systems for novel nano-devices such as single electron transistor (SET). Here in this research, we present an analysis of the electron trajectory in the vicinity of gallium arsenide (GaAs) quantum dot. To pe...

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Main Authors: Hanafi Ithnin, M., Khalid Kasmin, A., Radzi Mat Isa, A., Shaari, R., Ahmed
Format: Article
Language:English
Published: Universiti Kebangsaan Malaysia 2014
Online Access:http://journalarticle.ukm.my/7169/1/02_Hanafi_Ithnin.pdf
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author Hanafi Ithnin,
M., Khalid Kasmin
A., Radzi Mat Isa
A., Shaari
R., Ahmed
author_facet Hanafi Ithnin,
M., Khalid Kasmin
A., Radzi Mat Isa
A., Shaari
R., Ahmed
author_sort Hanafi Ithnin,
collection UKM
description Quantum dots being an interesting class of nanostructures are considered potential prototype systems for novel nano-devices such as single electron transistor (SET). Here in this research, we present an analysis of the electron trajectory in the vicinity of gallium arsenide (GaAs) quantum dot. To perform this study, DFT based methodology is employed to optimize structure of quantum dot and determining the electrostatic potential around the dot. Under the influence of obtained electrostatic potential, trajectory of the moving electron towards the dot is investigated. The results showed that GaAs quantum dot have negative and positive potential surfaces that influence the electron interaction with the dot. These results motivate the development of SET electrode channel where the electron moves towards the dot on the surface with positive potential rather than negative potential surface.
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spelling ukm.eprints-71692016-12-14T06:43:17Z http://journalarticle.ukm.my/7169/ An analysis of the electron trajectory in the vicinity of GaAs quantum dot Hanafi Ithnin, M., Khalid Kasmin A., Radzi Mat Isa A., Shaari R., Ahmed Quantum dots being an interesting class of nanostructures are considered potential prototype systems for novel nano-devices such as single electron transistor (SET). Here in this research, we present an analysis of the electron trajectory in the vicinity of gallium arsenide (GaAs) quantum dot. To perform this study, DFT based methodology is employed to optimize structure of quantum dot and determining the electrostatic potential around the dot. Under the influence of obtained electrostatic potential, trajectory of the moving electron towards the dot is investigated. The results showed that GaAs quantum dot have negative and positive potential surfaces that influence the electron interaction with the dot. These results motivate the development of SET electrode channel where the electron moves towards the dot on the surface with positive potential rather than negative potential surface. Universiti Kebangsaan Malaysia 2014-06 Article PeerReviewed application/pdf en http://journalarticle.ukm.my/7169/1/02_Hanafi_Ithnin.pdf Hanafi Ithnin, and M., Khalid Kasmin and A., Radzi Mat Isa and A., Shaari and R., Ahmed (2014) An analysis of the electron trajectory in the vicinity of GaAs quantum dot. Sains Malaysiana, 43 (6). pp. 819-825. ISSN 0126-6039 http://www.ukm.my/jsm/
spellingShingle Hanafi Ithnin,
M., Khalid Kasmin
A., Radzi Mat Isa
A., Shaari
R., Ahmed
An analysis of the electron trajectory in the vicinity of GaAs quantum dot
title An analysis of the electron trajectory in the vicinity of GaAs quantum dot
title_full An analysis of the electron trajectory in the vicinity of GaAs quantum dot
title_fullStr An analysis of the electron trajectory in the vicinity of GaAs quantum dot
title_full_unstemmed An analysis of the electron trajectory in the vicinity of GaAs quantum dot
title_short An analysis of the electron trajectory in the vicinity of GaAs quantum dot
title_sort analysis of the electron trajectory in the vicinity of gaas quantum dot
url http://journalarticle.ukm.my/7169/1/02_Hanafi_Ithnin.pdf
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