Structural properties of zinc oxide thin films deposited on various substrates

In this work, the structural properties of radio frequency sputtering-grown zinc oxide (ZnO) thin films on sapphire (Al2O3), gallium arsenide (GaAs) and n-type silicon (Si) substrates were characterized. Scanning electron microscopy was employed to study the surface morphology of the samples. X-ray...

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Main Authors: C.G., Ching, P.K., Ooi, S.S., Ng, Hassan, Z., Abu Hassan, H., Abdullah, M.J.
Format: Article
Language:English
Published: Universiti Kebangsaan Malaysia 2014
Online Access:http://journalarticle.ukm.my/7183/1/16_C.G._Ching.pdf
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author C.G., Ching
P.K., Ooi
S.S., Ng
Hassan, Z.
Abu Hassan, H.
Abdullah, M.J.
author_facet C.G., Ching
P.K., Ooi
S.S., Ng
Hassan, Z.
Abu Hassan, H.
Abdullah, M.J.
author_sort C.G., Ching
collection UKM
description In this work, the structural properties of radio frequency sputtering-grown zinc oxide (ZnO) thin films on sapphire (Al2O3), gallium arsenide (GaAs) and n-type silicon (Si) substrates were characterized. Scanning electron microscopy was employed to study the surface morphology of the samples. X-ray diffraction (XRD) measurements were also performed to obtain the structural information of the samples. The XRD results showed that the ZnO layers grown on different substrates have similar lattice constant (c) values, which were used to calculate the strain percentages of the ZnO thin films. The surface morphologies of the ZnO thin films indicated the formation of a granular surface when ZnO is deposited on n-type Si(100) and Si(111) substrates. Meanwhile, a leaf-like surface is obtained when ZnO is deposited on GaAs and Al2O3 substrates. The results showed that the ZnO thin film grown on n-type Si(100) has the best quality among all the samples.
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spelling ukm.eprints-71832016-12-14T06:43:19Z http://journalarticle.ukm.my/7183/ Structural properties of zinc oxide thin films deposited on various substrates C.G., Ching P.K., Ooi S.S., Ng Hassan, Z. Abu Hassan, H. Abdullah, M.J. In this work, the structural properties of radio frequency sputtering-grown zinc oxide (ZnO) thin films on sapphire (Al2O3), gallium arsenide (GaAs) and n-type silicon (Si) substrates were characterized. Scanning electron microscopy was employed to study the surface morphology of the samples. X-ray diffraction (XRD) measurements were also performed to obtain the structural information of the samples. The XRD results showed that the ZnO layers grown on different substrates have similar lattice constant (c) values, which were used to calculate the strain percentages of the ZnO thin films. The surface morphologies of the ZnO thin films indicated the formation of a granular surface when ZnO is deposited on n-type Si(100) and Si(111) substrates. Meanwhile, a leaf-like surface is obtained when ZnO is deposited on GaAs and Al2O3 substrates. The results showed that the ZnO thin film grown on n-type Si(100) has the best quality among all the samples. Universiti Kebangsaan Malaysia 2014-06 Article PeerReviewed application/pdf en http://journalarticle.ukm.my/7183/1/16_C.G._Ching.pdf C.G., Ching and P.K., Ooi and S.S., Ng and Hassan, Z. and Abu Hassan, H. and Abdullah, M.J. (2014) Structural properties of zinc oxide thin films deposited on various substrates. Sains Malaysiana, 43 (6). pp. 923-927. ISSN 0126-6039 http://www.ukm.my/jsm/
spellingShingle C.G., Ching
P.K., Ooi
S.S., Ng
Hassan, Z.
Abu Hassan, H.
Abdullah, M.J.
Structural properties of zinc oxide thin films deposited on various substrates
title Structural properties of zinc oxide thin films deposited on various substrates
title_full Structural properties of zinc oxide thin films deposited on various substrates
title_fullStr Structural properties of zinc oxide thin films deposited on various substrates
title_full_unstemmed Structural properties of zinc oxide thin films deposited on various substrates
title_short Structural properties of zinc oxide thin films deposited on various substrates
title_sort structural properties of zinc oxide thin films deposited on various substrates
url http://journalarticle.ukm.my/7183/1/16_C.G._Ching.pdf
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