Simulation on the roles of the number of quantum well and doping in InxGa1-xN Multiple Quantum Wells LEDs
In this work, the emission efficiency of InxGa1-xN based light emitting diodes (LEDs) had been numerically investigated with the variation of the number of quantum well. From our calculation, we found that non-uniformity of carriers distribution (especially electron) in the wells leads to serious in...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Universiti Kebangsaan Malaysia
2014
|
| Online Access: | http://journalarticle.ukm.my/7819/1/13_N._Zainal.pdf |