Subsolidus solution and oxide ionic conductivity of Nd-substituted Bismuth Yttria Fluorites

Pure phase Bi1.6Y0.4-xNdxO3 solid solution with x = 0.00, 0.10 and 0.20 was successfully synthesised via conventional solid state method at 850°C in 21 h. The materials were refined and fully indexed with space group Fm-3m and lattice parameters, a ranging from 5.5124(1) Å to 5.5289(4) Å. Variation...

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Main Authors: Rahman, N., Tan, K.B., Zainal, Z., Khaw, C., Chon, M.P.
Format: Article
Language:English
Published: Universiti Kebangsaan Malaysia 2015
Online Access:http://journalarticle.ukm.my/8986/1/12_K.B._Tan.pdf
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author Rahman, N.
Tan, K.B.
Zainal, Z.
Khaw, C.
Chon, M.P.
author_facet Rahman, N.
Tan, K.B.
Zainal, Z.
Khaw, C.
Chon, M.P.
author_sort Rahman, N.
collection UKM
description Pure phase Bi1.6Y0.4-xNdxO3 solid solution with x = 0.00, 0.10 and 0.20 was successfully synthesised via conventional solid state method at 850°C in 21 h. The materials were refined and fully indexed with space group Fm-3m and lattice parameters, a ranging from 5.5124(1) Å to 5.5289(4) Å. Variation of the lattice parameters of these materials were found in an almost linear correlation with increasing Nd2O3 dopant concentration. Thermal analysis of Bi1.6Y0.4-xNdxO3 solid solution showed no thermal event that associated with any phase transition or weight loss within the studied temperature range of 35 to 900°C. The electrical properties of the samples were investigated by ac impedance analyser, HP4192 at temperature ranging from 25 to 800°C over frequency of 5 Hz to 13 MHz. Bi1.6Y0.3Nd0.1O3 exhibited the highest oxide ion conductivity among the synthesised samples in Bi1.6Y0.4-xNdxO3 solid solution.
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spelling ukm.eprints-89862016-12-14T06:48:38Z http://journalarticle.ukm.my/8986/ Subsolidus solution and oxide ionic conductivity of Nd-substituted Bismuth Yttria Fluorites Rahman, N. Tan, K.B. Zainal, Z. Khaw, C. Chon, M.P. Pure phase Bi1.6Y0.4-xNdxO3 solid solution with x = 0.00, 0.10 and 0.20 was successfully synthesised via conventional solid state method at 850°C in 21 h. The materials were refined and fully indexed with space group Fm-3m and lattice parameters, a ranging from 5.5124(1) Å to 5.5289(4) Å. Variation of the lattice parameters of these materials were found in an almost linear correlation with increasing Nd2O3 dopant concentration. Thermal analysis of Bi1.6Y0.4-xNdxO3 solid solution showed no thermal event that associated with any phase transition or weight loss within the studied temperature range of 35 to 900°C. The electrical properties of the samples were investigated by ac impedance analyser, HP4192 at temperature ranging from 25 to 800°C over frequency of 5 Hz to 13 MHz. Bi1.6Y0.3Nd0.1O3 exhibited the highest oxide ion conductivity among the synthesised samples in Bi1.6Y0.4-xNdxO3 solid solution. Universiti Kebangsaan Malaysia 2015-07 Article PeerReviewed application/pdf en http://journalarticle.ukm.my/8986/1/12_K.B._Tan.pdf Rahman, N. and Tan, K.B. and Zainal, Z. and Khaw, C. and Chon, M.P. (2015) Subsolidus solution and oxide ionic conductivity of Nd-substituted Bismuth Yttria Fluorites. Sains Malaysiana, 44 (7). pp. 1003-1009. ISSN 0126-6039 http://www.ukm.my/jsm/malay_journals/jilid44bil7_2015/KandunganJilid44Bil7_2015.html
spellingShingle Rahman, N.
Tan, K.B.
Zainal, Z.
Khaw, C.
Chon, M.P.
Subsolidus solution and oxide ionic conductivity of Nd-substituted Bismuth Yttria Fluorites
title Subsolidus solution and oxide ionic conductivity of Nd-substituted Bismuth Yttria Fluorites
title_full Subsolidus solution and oxide ionic conductivity of Nd-substituted Bismuth Yttria Fluorites
title_fullStr Subsolidus solution and oxide ionic conductivity of Nd-substituted Bismuth Yttria Fluorites
title_full_unstemmed Subsolidus solution and oxide ionic conductivity of Nd-substituted Bismuth Yttria Fluorites
title_short Subsolidus solution and oxide ionic conductivity of Nd-substituted Bismuth Yttria Fluorites
title_sort subsolidus solution and oxide ionic conductivity of nd substituted bismuth yttria fluorites
url http://journalarticle.ukm.my/8986/1/12_K.B._Tan.pdf
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