Thermoluminescence study of semiconductor materials SixTe60−x As30Ge10
The effect of gamma irradiation on SixTe60−xAs30Ge10, where x= 5, 12 and 20, has been studied using thermoluminescence (TL). As expected in semiconductor materials, both x=5 and 20 chalcogenides showed a wide TL peak ranging from ∼80–300 °C. However, these two materials also exhibited a sharp peak a...
| প্রধান লেখক: | , , |
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| বিন্যাস: | প্রবন্ধ |
| প্রকাশিত: |
Springer Verlag (Germany)
1992
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| বিষয়গুলি: |