Thermoluminescence study of semiconductor materials SixTe60−x As30Ge10

The effect of gamma irradiation on SixTe60−xAs30Ge10, where x= 5, 12 and 20, has been studied using thermoluminescence (TL). As expected in semiconductor materials, both x=5 and 20 chalcogenides showed a wide TL peak ranging from ∼80–300 °C. However, these two materials also exhibited a sharp peak a...

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Bibliografische gegevens
Hoofdauteurs: Maged, A.F., Amin, Y.M., Durrani, S.A.
Formaat: Artikel
Gepubliceerd in: Springer Verlag (Germany) 1992
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