Electronic surface, optical and electrical properties of p – GaN activated via in-situ MOCVD and ex-situ thermal annealing in InGaN/GaN LED
Electronic surface properties, optical and electrical characteristics of p-type Mg-doped Gallium Nitride (p-GaN) activated under different thermal annealing condition were investigated. In this work, p-GaN samples were subjected to in-situ and ex-situ thermal annealing process at 650 °C in Nitrogen...
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Elsevier
2020
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| author | Mahat, Mohamad Raqif Talik, Noor Azrina Abd Rahman, Mohd Nazri Anuar, Mohd Afiq Allif, Kamarul Azman, Adreen Nakajima, Hideki Shuhaimi, Ahmad Abd Majid, Wan Haliza |
| author_facet | Mahat, Mohamad Raqif Talik, Noor Azrina Abd Rahman, Mohd Nazri Anuar, Mohd Afiq Allif, Kamarul Azman, Adreen Nakajima, Hideki Shuhaimi, Ahmad Abd Majid, Wan Haliza |
| author_sort | Mahat, Mohamad Raqif |
| collection | UM |
| description | Electronic surface properties, optical and electrical characteristics of p-type Mg-doped Gallium Nitride (p-GaN) activated under different thermal annealing condition were investigated. In this work, p-GaN samples were subjected to in-situ and ex-situ thermal annealing process at 650 °C in Nitrogen (N2) rich condition. In-situ annealing process took place in Metal Oxide Chemical Vapor Deposition (MOCVD) chamber while ex-situ annealing process was carried out in the conventional oven. X-Ray and Ultraviolet Photoemission Spectroscopy (XPS/UPS) were used to observe the energy alignment of the p-GaN surface. From PES spectra, the sample subjected to in-situ thermal annealing shown to exhibit lower surface bend bending of 0.28 eV as compared to ex-situ thermal annealing activation with 0.45 eV band bending. This result is in agreement with specific contact resistance measurement that shows in-situ sample exhibits lower resistance resulted in better carrier injection from metal to p-GaN. Photoluminescence (PL) spectra elucidates that in-situ sample has a good surface quality with less nitrogen related vacancies (VN) formed on the p-GaN surface. All these results are further proved with the higher output power from LED with in-situ annealing. At 20 mA, in-situ sample shown an increment of ~14% light output power compared to ex-situ sample. Results obtained in this work suggest that the thermal activation condition for p-GaN activation process plays an active role on the surface quality as well as the energy alignment of the film surface and shows the potential of in-situ p-GaN activation for tunnel junction structure. © 2019 Elsevier Ltd |
| first_indexed | 2024-03-06T05:05:49Z |
| format | Article |
| id | um.eprints-1255 |
| institution | Universiti Malaya |
| last_indexed | 2024-03-06T05:05:49Z |
| publishDate | 2020 |
| publisher | Elsevier |
| record_format | dspace |
| spelling | um.eprints-12552019-11-11T05:52:34Z http://eprints.um.edu.my/1255/ Electronic surface, optical and electrical properties of p – GaN activated via in-situ MOCVD and ex-situ thermal annealing in InGaN/GaN LED Mahat, Mohamad Raqif Talik, Noor Azrina Abd Rahman, Mohd Nazri Anuar, Mohd Afiq Allif, Kamarul Azman, Adreen Nakajima, Hideki Shuhaimi, Ahmad Abd Majid, Wan Haliza Q Science (General) QC Physics Electronic surface properties, optical and electrical characteristics of p-type Mg-doped Gallium Nitride (p-GaN) activated under different thermal annealing condition were investigated. In this work, p-GaN samples were subjected to in-situ and ex-situ thermal annealing process at 650 °C in Nitrogen (N2) rich condition. In-situ annealing process took place in Metal Oxide Chemical Vapor Deposition (MOCVD) chamber while ex-situ annealing process was carried out in the conventional oven. X-Ray and Ultraviolet Photoemission Spectroscopy (XPS/UPS) were used to observe the energy alignment of the p-GaN surface. From PES spectra, the sample subjected to in-situ thermal annealing shown to exhibit lower surface bend bending of 0.28 eV as compared to ex-situ thermal annealing activation with 0.45 eV band bending. This result is in agreement with specific contact resistance measurement that shows in-situ sample exhibits lower resistance resulted in better carrier injection from metal to p-GaN. Photoluminescence (PL) spectra elucidates that in-situ sample has a good surface quality with less nitrogen related vacancies (VN) formed on the p-GaN surface. All these results are further proved with the higher output power from LED with in-situ annealing. At 20 mA, in-situ sample shown an increment of ~14% light output power compared to ex-situ sample. Results obtained in this work suggest that the thermal activation condition for p-GaN activation process plays an active role on the surface quality as well as the energy alignment of the film surface and shows the potential of in-situ p-GaN activation for tunnel junction structure. © 2019 Elsevier Ltd Elsevier 2020-05 Article PeerReviewed Mahat, Mohamad Raqif and Talik, Noor Azrina and Abd Rahman, Mohd Nazri and Anuar, Mohd Afiq and Allif, Kamarul and Azman, Adreen and Nakajima, Hideki and Shuhaimi, Ahmad and Abd Majid, Wan Haliza (2020) Electronic surface, optical and electrical properties of p – GaN activated via in-situ MOCVD and ex-situ thermal annealing in InGaN/GaN LED. Materials Science in Semiconductor Processing, 106. p. 104757. ISSN 1369-8001, DOI https://doi.org/10.1016/j.mssp.2019.104757 <https://doi.org/10.1016/j.mssp.2019.104757>. https://doi.org/10.1016/j.mssp.2019.104757 doi:10.1016/j.mssp.2019.104757 |
| spellingShingle | Q Science (General) QC Physics Mahat, Mohamad Raqif Talik, Noor Azrina Abd Rahman, Mohd Nazri Anuar, Mohd Afiq Allif, Kamarul Azman, Adreen Nakajima, Hideki Shuhaimi, Ahmad Abd Majid, Wan Haliza Electronic surface, optical and electrical properties of p – GaN activated via in-situ MOCVD and ex-situ thermal annealing in InGaN/GaN LED |
| title | Electronic surface, optical and electrical properties of p – GaN activated via in-situ MOCVD and ex-situ thermal annealing in InGaN/GaN LED |
| title_full | Electronic surface, optical and electrical properties of p – GaN activated via in-situ MOCVD and ex-situ thermal annealing in InGaN/GaN LED |
| title_fullStr | Electronic surface, optical and electrical properties of p – GaN activated via in-situ MOCVD and ex-situ thermal annealing in InGaN/GaN LED |
| title_full_unstemmed | Electronic surface, optical and electrical properties of p – GaN activated via in-situ MOCVD and ex-situ thermal annealing in InGaN/GaN LED |
| title_short | Electronic surface, optical and electrical properties of p – GaN activated via in-situ MOCVD and ex-situ thermal annealing in InGaN/GaN LED |
| title_sort | electronic surface optical and electrical properties of p gan activated via in situ mocvd and ex situ thermal annealing in ingan gan led |
| topic | Q Science (General) QC Physics |
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