Electronic surface, optical and electrical properties of p – GaN activated via in-situ MOCVD and ex-situ thermal annealing in InGaN/GaN LED

Παρόμοια τεκμήρια

• On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes
  ανά: Kyaw, Zabu, κ.ά.
  Έκδοση: (2014)
• Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer
  ανά: Sun, Xiaowei, κ.ά.
  Έκδοση: (2013)
• Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer : errata
  ανά: Zhang, Zi-Hui, κ.ά.
  Έκδοση: (2013)
• Positioning of periodic AlN/GaN multilayers: Effect on crystalline quality of a-plane GaN
  ανά: Kamarudzaman, Anas, κ.ά.
  Έκδοση: (2020)
• Effect of thermal interaction between bulk GaN substrates and corral sapphire on blue light emission InGaN/GaN multi-quantum wells by MOCVD
  ανά: Sivanathan, P.C., κ.ά.
  Έκδοση: (2018)