Band alignment and enhanced breakdown field of simultaneously oxidized and nitrided Zr film on Si
The band alignment of ZrO2/interfacial layer/Si structure fabricated by simultaneous oxidation and nitridation of sputtered Zr on Si in N2O at 700°C for different durations has been established by using X-ray photoelectron spectroscopy. Valence band offset of ZrO2/Si was found to be 4.75 eV, while t...
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| Format: | Article |
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SpringerOpen
2011
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