Electrical study of ZrO2/Si system formed at different oxidation/nitridation temperatures for extended duration in N2O ambient
Electrical properties of ZrO2 formed by simultaneous oxidation and nitridation of sputtered Zr thin films on Si have been systematically investigated. Various oxidation/nitridation temperatures (500, 700, 900, and 1100 °C) have been carried out in N2O ambient for an extended time of 20 min. Results...
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| Format: | Article |
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Materials Research Society
2013
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| author | Wong, Y.H. Cheong, K.Y. |
| author_facet | Wong, Y.H. Cheong, K.Y. |
| author_sort | Wong, Y.H. |
| collection | UM |
| description | Electrical properties of ZrO2 formed by simultaneous oxidation and nitridation of sputtered Zr thin films on Si have been systematically investigated. Various oxidation/nitridation temperatures (500, 700, 900, and 1100 °C) have been carried out in N2O ambient for an extended time of 20 min. Results indicated that the sample oxidized and nitrided at 700 °C possessed the highest effective dielectric constant of 18.22 and electrical breakdown field of 10.7 MV/cm at a current density of 10−6 A/cm2. This is attributed to the lowest effective oxide charge, interface-trap density, and total interface-trap density. The Fowler–Nordheim tunneling mechanism has been investigated for all samples and the highest value of barrier height extracted between the conduction band edges of oxide and semiconductor was 1.22 eV. |
| first_indexed | 2024-03-06T05:32:39Z |
| format | Article |
| id | um.eprints-13004 |
| institution | Universiti Malaya |
| last_indexed | 2024-03-06T05:32:39Z |
| publishDate | 2013 |
| publisher | Materials Research Society |
| record_format | dspace |
| spelling | um.eprints-130042015-03-11T03:34:16Z http://eprints.um.edu.my/13004/ Electrical study of ZrO2/Si system formed at different oxidation/nitridation temperatures for extended duration in N2O ambient Wong, Y.H. Cheong, K.Y. TA Engineering (General). Civil engineering (General) Electrical properties of ZrO2 formed by simultaneous oxidation and nitridation of sputtered Zr thin films on Si have been systematically investigated. Various oxidation/nitridation temperatures (500, 700, 900, and 1100 °C) have been carried out in N2O ambient for an extended time of 20 min. Results indicated that the sample oxidized and nitrided at 700 °C possessed the highest effective dielectric constant of 18.22 and electrical breakdown field of 10.7 MV/cm at a current density of 10−6 A/cm2. This is attributed to the lowest effective oxide charge, interface-trap density, and total interface-trap density. The Fowler–Nordheim tunneling mechanism has been investigated for all samples and the highest value of barrier height extracted between the conduction band edges of oxide and semiconductor was 1.22 eV. Materials Research Society 2013 Article PeerReviewed Wong, Y.H. and Cheong, K.Y. (2013) Electrical study of ZrO2/Si system formed at different oxidation/nitridation temperatures for extended duration in N2O ambient. Journal of Materials Research, 28 (21). pp. 2985-2989. ISSN 0884-2914, DOI https://doi.org/10.1557/jmr.2013.281 <https://doi.org/10.1557/jmr.2013.281>. http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=9064129 http://dx.doi.org/10.1557/jmr.2013.281 |
| spellingShingle | TA Engineering (General). Civil engineering (General) Wong, Y.H. Cheong, K.Y. Electrical study of ZrO2/Si system formed at different oxidation/nitridation temperatures for extended duration in N2O ambient |
| title | Electrical study of ZrO2/Si system formed at different oxidation/nitridation temperatures for extended duration in N2O ambient |
| title_full | Electrical study of ZrO2/Si system formed at different oxidation/nitridation temperatures for extended duration in N2O ambient |
| title_fullStr | Electrical study of ZrO2/Si system formed at different oxidation/nitridation temperatures for extended duration in N2O ambient |
| title_full_unstemmed | Electrical study of ZrO2/Si system formed at different oxidation/nitridation temperatures for extended duration in N2O ambient |
| title_short | Electrical study of ZrO2/Si system formed at different oxidation/nitridation temperatures for extended duration in N2O ambient |
| title_sort | electrical study of zro2 si system formed at different oxidation nitridation temperatures for extended duration in n2o ambient |
| topic | TA Engineering (General). Civil engineering (General) |
| work_keys_str_mv | AT wongyh electricalstudyofzro2sisystemformedatdifferentoxidationnitridationtemperaturesforextendeddurationinn2oambient AT cheongky electricalstudyofzro2sisystemformedatdifferentoxidationnitridationtemperaturesforextendeddurationinn2oambient |