Electrical study of ZrO2/Si system formed at different oxidation/nitridation temperatures for extended duration in N2O ambient
Electrical properties of ZrO2 formed by simultaneous oxidation and nitridation of sputtered Zr thin films on Si have been systematically investigated. Various oxidation/nitridation temperatures (500, 700, 900, and 1100 °C) have been carried out in N2O ambient for an extended time of 20 min. Results...
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Materials Research Society
2013
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