Temperature dependence of raman scattering in 4H-SiC films under different growth conditions
The microRaman scattering of 4H-SiC films, fabricated by low pressure chemical vapor deposition under different growth conditions, is investigated at temperatures ranging from 80K to 550 K. The effects of growth conditions on E-2(TO), E-1(TO) and A(1)(LO) phonon mode frequencies are negligible. The...
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| Format: | Article |
| Language: | English |
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Iop Publishing Ltd, Temple Circus, Temple Way, Bristol Bs1 6be, England
2015
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| Online Access: | http://eprints.um.edu.my/13808/1/Temperature_Dependence_of_Raman_Scattering_in_4H-SiC_Films.pdf |
| _version_ | 1825720419368304640 |
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| author | Wang, H.C. He, Y.T. Sun, H.Y. Qiu, Z.R. Xie, D. Mei, T. Tin, C.C. Feng, Z.C. |
| author_facet | Wang, H.C. He, Y.T. Sun, H.Y. Qiu, Z.R. Xie, D. Mei, T. Tin, C.C. Feng, Z.C. |
| author_sort | Wang, H.C. |
| collection | UM |
| description | The microRaman scattering of 4H-SiC films, fabricated by low pressure chemical vapor deposition under different growth conditions, is investigated at temperatures ranging from 80K to 550 K. The effects of growth conditions on E-2(TO), E-1(TO) and A(1)(LO) phonon mode frequencies are negligible. The temperature dependences of phonon linewidth and lifetime of E2(TO) modes are analyzed in terms of an anharmonic damping effect induced by thermal and growth conditions. The results show that the lifetime of E-2(TO) mode increases when the quality of the sample improves. Unlike other phone modes, Raman shift of A(1) (longitudinal optical plasma coupling (LOPC)) mode does not decrease monotonously when the temperature increases, but tends to blueshift at low temperatures and to redshift at relatively high temperatures. Theoretical analyses are given for the abnormal phenomena of A(1)(LOPC) mode in 4H-SiC. |
| first_indexed | 2024-03-06T05:34:51Z |
| format | Article |
| id | um.eprints-13808 |
| institution | Universiti Malaya |
| language | English |
| last_indexed | 2024-03-06T05:34:51Z |
| publishDate | 2015 |
| publisher | Iop Publishing Ltd, Temple Circus, Temple Way, Bristol Bs1 6be, England |
| record_format | dspace |
| spelling | um.eprints-138082015-07-25T02:19:28Z http://eprints.um.edu.my/13808/ Temperature dependence of raman scattering in 4H-SiC films under different growth conditions Wang, H.C. He, Y.T. Sun, H.Y. Qiu, Z.R. Xie, D. Mei, T. Tin, C.C. Feng, Z.C. T Technology (General) TJ Mechanical engineering and machinery The microRaman scattering of 4H-SiC films, fabricated by low pressure chemical vapor deposition under different growth conditions, is investigated at temperatures ranging from 80K to 550 K. The effects of growth conditions on E-2(TO), E-1(TO) and A(1)(LO) phonon mode frequencies are negligible. The temperature dependences of phonon linewidth and lifetime of E2(TO) modes are analyzed in terms of an anharmonic damping effect induced by thermal and growth conditions. The results show that the lifetime of E-2(TO) mode increases when the quality of the sample improves. Unlike other phone modes, Raman shift of A(1) (longitudinal optical plasma coupling (LOPC)) mode does not decrease monotonously when the temperature increases, but tends to blueshift at low temperatures and to redshift at relatively high temperatures. Theoretical analyses are given for the abnormal phenomena of A(1)(LOPC) mode in 4H-SiC. Iop Publishing Ltd, Temple Circus, Temple Way, Bristol Bs1 6be, England 2015-04 Article PeerReviewed application/pdf en http://eprints.um.edu.my/13808/1/Temperature_Dependence_of_Raman_Scattering_in_4H-SiC_Films.pdf Wang, H.C. and He, Y.T. and Sun, H.Y. and Qiu, Z.R. and Xie, D. and Mei, T. and Tin, C.C. and Feng, Z.C. (2015) Temperature dependence of raman scattering in 4H-SiC films under different growth conditions. Chinese Physics Letters, 32 (4). p. 5. ISSN 0256-307X, DOI https://doi.org/10.1088/0256-307x/32/4/047801 <https://doi.org/10.1088/0256-307x/32/4/047801>. http://iopscience.iop.org/0256-307X/32/4/047801/pdf/0256-307X_32_4_047801.pdf 10.1088/0256-307x/32/4/047801 |
| spellingShingle | T Technology (General) TJ Mechanical engineering and machinery Wang, H.C. He, Y.T. Sun, H.Y. Qiu, Z.R. Xie, D. Mei, T. Tin, C.C. Feng, Z.C. Temperature dependence of raman scattering in 4H-SiC films under different growth conditions |
| title | Temperature dependence of raman scattering in 4H-SiC films under different growth conditions |
| title_full | Temperature dependence of raman scattering in 4H-SiC films under different growth conditions |
| title_fullStr | Temperature dependence of raman scattering in 4H-SiC films under different growth conditions |
| title_full_unstemmed | Temperature dependence of raman scattering in 4H-SiC films under different growth conditions |
| title_short | Temperature dependence of raman scattering in 4H-SiC films under different growth conditions |
| title_sort | temperature dependence of raman scattering in 4h sic films under different growth conditions |
| topic | T Technology (General) TJ Mechanical engineering and machinery |
| url | http://eprints.um.edu.my/13808/1/Temperature_Dependence_of_Raman_Scattering_in_4H-SiC_Films.pdf |
| work_keys_str_mv | AT wanghc temperaturedependenceoframanscatteringin4hsicfilmsunderdifferentgrowthconditions AT heyt temperaturedependenceoframanscatteringin4hsicfilmsunderdifferentgrowthconditions AT sunhy temperaturedependenceoframanscatteringin4hsicfilmsunderdifferentgrowthconditions AT qiuzr temperaturedependenceoframanscatteringin4hsicfilmsunderdifferentgrowthconditions AT xied temperaturedependenceoframanscatteringin4hsicfilmsunderdifferentgrowthconditions AT meit temperaturedependenceoframanscatteringin4hsicfilmsunderdifferentgrowthconditions AT tincc temperaturedependenceoframanscatteringin4hsicfilmsunderdifferentgrowthconditions AT fengzc temperaturedependenceoframanscatteringin4hsicfilmsunderdifferentgrowthconditions |