Temperature dependence of raman scattering in 4H-SiC films under different growth conditions

Temperature dependence of raman scattering in 4H-SiC films under different growth conditions

The microRaman scattering of 4H-SiC films, fabricated by low pressure chemical vapor deposition under different growth conditions, is investigated at temperatures ranging from 80K to 550 K. The effects of growth conditions on E-2(TO), E-1(TO) and A(1)(LO) phonon mode frequencies are negligible. The...

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Bibliographic Details
Main Authors: Wang, H.C., He, Y.T., Sun, H.Y., Qiu, Z.R., Xie, D., Mei, T., Tin, C.C., Feng, Z.C.
Format: Article
Language:English
Published: Iop Publishing Ltd, Temple Circus, Temple Way, Bristol Bs1 6be, England 2015
Subjects:
T Technology (General)
TJ Mechanical engineering and machinery
Online Access:http://eprints.um.edu.my/13808/1/Temperature_Dependence_of_Raman_Scattering_in_4H-SiC_Films.pdf

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